The electron cyclotron resonance microwave plasma chemical vapor deposition (ECRPCVD) method has been applied to prepare a-Si:H films. A high deposition rate of 136 nm/min was achieved. Even without substrate heating and with the high deposition rate, a-Si:H films prepared by ECRPCVD have sufficient characteristics, as follows: the dark conductivity is 3-4×10-10S/cm, ηµτ is 4.2×10-5cm2/V and the optical band-gap is 1.81 eV. Furthermore, the electric characteristics are somewhat improved with substrate heating.
Hydrogenated amorphous silicon films prepared by ECRPCVD without substrate heating and with a high deposition rate of 136 nm/min have been applied to ITO/a-Si:H/Cr Schottky-barrier photodiodes. These photodiodes have sufficient characteristics to be applied to image sensors for a facsimile reader and other systems.
The influence of hydrogenation on OFF current of TFTs with a bottom gate staggered structure has been investigated. The hydrogenation is done by exposing the surface of the a-Si:H channel layer to H2 plasma. The hydrogenation decreases the OFF current by more than one order of magnitude. The decrease in the OFF current is attributed to the increase in the density of states at the interface between the a-Si:H channel layer and the SiN passivating layer.
Evaluation of the ion bombardment energy for growing diamondlike carbon films in an electron cyclotron resonance plasma enhanced chemical vapor deposition Effect of pressure on the deposition of hydrogenated amorphous carbon films using the electron cyclotron resonance chemical vapor deposition Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method
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