A layer-by-layer Cat-CVD of conformal and stoichiometric silicon nitride with in-situ H2 post-treatment

Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films

“…Recently, conformal step coverage was independently reported by Wang et al [8] and Kitazoe et al [9] Step coverage of nearly 100%, defined as the thickness ratio at the side and the bottom, is obtained for the trench structure with a width of 100 nm and an aspect ratio of 1.5 [8]. No aminosilane species are observed in the gas phase for SiN x preparation by Cat-CVD [26], although those species are observed for SiN x preparation by PECVD [27] or photo-CVD at 193 nm [28].…”

“…Since these publications, SiN x films have been extensively studied for application as passivation and coating films and also as insulating films used in ultralarge-scale integrated circuits (ULSIs) [5] and thin-film transistors (TFTs) [6,7]. Quite recently, Wang et al [8] and Kitazoe et al [9] reported conformal step coverage for SiN x films in the trench structure used as the next-generation ULSIs. In this paper, these applications will be introduced along with the fundamental properties of SiN x films.…”

ULVAC research and development of Cat-CVD applications

“…For the Si processing technology, Cat-CVD SiN has various advantages [1,2]. For example 1) Low temperature deposition 2) Low hydrogen content 3) Low process damage 4) Conformal step coverage.…”

Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 °C

“…It has also been reported that the etching rate of SiN x films prepared over 300°C is independent of the deposited position of the trenches and one order of magnitude less than that of plasma enhanced CVD SiN x films [8]. In addition, 50-nm thick SiN x films prepared at 350°C have been reported to give nearly 100% The problem is that they had to employ a sophisticated layer-by-layer deposition technique [10]. In this paper, the coverage properties of SiN x films prepared by Cat-CVD on trenched substrates (aspect ratios: 0.35 -3.4) below 80°C were investigated.…”