Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 °C

Heya, Akira; Minamikawa, Toshiharu; Niki, Toshikazu; Minami, Shigehira; Masuda, Atsushi; Umemoto, Hironobu; Matsuo, Naoto; Matsumura, Hideki

doi:10.1016/j.tsf.2007.11.001

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…[6] Conformal deposits are also often requested for the design of multilayer systems (interlayer oxides or protective nitrides). [7][8][9] Recent progress in deposition tools, as illustrated by atomic layer deposition (ALD), allowed the production of highly conformal deposits in trenches of high aspect ratios (AR: depth-to-aperture dimensions ratio). [10] Modeling of layer deposition on structured substrates, including gas-and plasma-phase chemistry and interface dynamics, has been developed over many decades [11][12][13][14][15] for standard material deposition (a:SiH, SiO x , SiN x , CF x .…”

Section: Introductionmentioning

confidence: 99%

Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

Supiot¹,

Vivien²,

Blary³

et al. 2011

Chemical Vapor Deposition

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Thin films of organosilicon materials produced by plasma-assisted deposition are frequently used because of their multifunctional character, but few comparative studies into their growth on structured surfaces are available. Two types of CVD processes, plasma-enhanced (PE)CVD and remote plasma-enhanced (RPE)CVD are taken as typical operating conditions. Polymer films of thicknesses ranging from 0.25 to 1.2 mm are obtained by both processes from the tetramethylsiloxane (TMDSO) precursor, on silicon substrates microstructured with a set of patterns (trenches, holes, and columns) with various spacings, and with vertical dimensions of 1.3 or 1.45 mm. Analysis by scanning electron microscopy (SEM) of the samples is carried out after sample cleavage. The effects of pattern size and shape, defined by the aspect ratio parameter, on the local growth rate are studied more specifically for trenches for both PECVD and RPECVD processes

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Section: Introductionmentioning

confidence: 99%

Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

Supiot¹,

Vivien²,

Blary³

et al. 2011

Chemical Vapor Deposition

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Influence of N2 flow rate on the mechanical properties of SiNx films deposited by microwave electron cyclotron resonance magnetron sputtering

Ding¹,

Xu²,

Lu³

et al. 2010

Thin Solid Films

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The effect of N2 flow rate on discharge characteristics of microwave electron cyclotron resonance plasma

Ding¹,

Xu²,

Lu³

et al. 2009

Physics of Plasmas

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The properties of plasma in Ar/N2 microwave electron cyclotron resonance discharge with a percentage of N2 flow rate ranging from 5% to 50% have been studied in order to understand the effect of N2 flow rate on the mechanical properties of silicon nitride films. N2+ radicals as well as N2, N+ are found by optical emission spectroscopy analysis. The evolution of plasma density, electron kinetic energy, N2+, N2, and N+ emission lines from mixed Ar/N2 plasma on changing mixture ratio has been studied. The mechanisms of their variations have been discussed. Moreover, an Ar/N2 flow ratio of 2/20 is considered to be the best condition for synthesizing a-Si3N4, which has been confirmed in the as-deposited silicon nitride films with quite good mechanical properties by nanoindentation analyses.

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Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 °C

Cited by 3 publications

References 14 publications

Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

Influence of N2 flow rate on the mechanical properties of SiNx films deposited by microwave electron cyclotron resonance magnetron sputtering

The effect of N2 flow rate on discharge characteristics of microwave electron cyclotron resonance plasma

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