Organosilicon Polymers Deposition by PECVD and RPECVD on Micropatterned Substrates

Abstract

Thin films of organosilicon materials produced by plasma-assisted deposition are frequently used because of their multifunctional character, but few comparative studies into their growth on structured surfaces are available. Two types of CVD processes, plasma-enhanced (PE)CVD and remote plasma-enhanced (RPE)CVD are taken as typical operating conditions. Polymer films of thicknesses ranging from 0.25 to 1.2 mm are obtained by both processes from the tetramethylsiloxane (TMDSO) precursor, on silicon substrates microstructured with a set of patterns (trenches, holes, and columns) with various spacings, and with vertical dimensions of 1.3 or 1.45 mm. Analysis by scanning electron microscopy (SEM) of the samples is carried out after sample cleavage. The effects of pattern size and shape, defined by the aspect ratio parameter, on the local growth rate are studied more specifically for trenches for both PECVD and RPECVD processes

Interaction of (3-Aminopropyl)triethoxysilane with Pulsed Ar–O2 Afterglow: Application to Nanoparticles Synthesis

“…The CH absorption band that characterizes the non-oxidized APTES molecule decreases when the duty cycle increases. Oxidation of organosilicon compound is known to follow such a trend, the increase in the duty cycle leading to higher oxidation level and to a transition from plasma polymer to inorganic material [48][49][50]. Here, the transition occurs near DC=60%, in agreement with results obtained by time-resolved emission spectroscopy.…”

Silicon Oxycarbide Films Produced by Remote Microwave Hydrogen Plasma CVD using a Tetramethyldisiloxane Precursor: Growth Kinetics, Structure, Surface Morphology, and Properties

“…The film growth rates measured for unheated substrates, were comparable for both deposition methods. However, the films produced by P‐CVD were found to be smoother than those of RP‐CVD . This was ascribed to a higher surface mobility of film‐forming species enhanced by an intense flux of oxygen atoms to a growth surface.…”

“…Only Supiot et. al . studied the growth of the films by P‐CVD and remote nitrogen plasma CVD on c‐Si surface patterned with the trenches, using the same precursor, such as 1,1,3,3‐tetramethylsiloxane admixed with oxygen.…”

Thermal properties of some organosilicon precursors for chemical vapor deposition

“…Products of their polymerization-polysilanes and polysiloxanes-that contain Si-Si or Si-O-Si fragments possess a number of practically attractive chemical and physical properties [1][2][3][4][5]. Volatile organosilicon compounds are also famous as CVD (chemical vapor deposition) precursors for the production of silicon-containing films and ceramics [6][7][8][9][10].…”