Ion bombardment effects on undoped hydrogenated amorphous silicon films deposited by the electron cyclotron resonance plasma chemical vapor deposition method

Abstract

Evaluation of the ion bombardment energy for growing diamondlike carbon films in an electron cyclotron resonance plasma enhanced chemical vapor deposition Effect of pressure on the deposition of hydrogenated amorphous carbon films using the electron cyclotron resonance chemical vapor deposition Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method

Electrode-selective deposition/etching processes using an SiF4/H2/Ar plasma chemistry excited by sawtooth tailored voltage waveforms

“…It should be noted that a difference in the maximum energy of ions impinging on the growing surface is expected (up to ~40 eV) when switching the driving voltage waveform. However, previous studies on the PECVD of silicon thin films [17][18][19], have shown that while such variations in ion energy can modify film quality, they have very little effect on the deposition/etching rate, as was observed in this study.…”

“…As the reactor in this study is geometrically asymmetric, the maximum ion energy observed on the substrate for both types of waveform is lower than would be observed a symmetric reactor. However, as ion energy alone is not a determining factor for deposition rate [17][18][19], this would at most result in a shifted process window for selective processing when transferring this process from a small, asymmetric reactor to a large, symmetric one.…”