Gas plasma etching of ion implanted chromium films

Yamazaki, Teruhiko; Suzuki, Yoshihiko; Nakata, H.

doi:10.1116/1.570668

Cited by 23 publications

(5 citation statements)

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“…The observed dose to form an etch-resistant layer is smaller by a factor of about 3 than the reported value [6]. The reason is not clear but may be due to the difference in the etching process or the film properties.…”

Section: Resultsmentioning

confidence: 47%

“…About 500nm thick Cr films were deposited on Si wafers by electron beam evaporation at a vacuum pressure of about 2x10- 6 Torr. The implanted latent image was developed by plasma etching using CCl 4 gas.…”

Section: Methodsmentioning

confidence: 99%

“…For example, it was found that Cr films implanted with Sb or As at a dose of < 10 1 6 /cm 2 become resistant to a plasma etching using CC1 4 gas [6].…”

Section: Introductionmentioning

confidence: 99%

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Maskless Patterning of Cr Films Using Focused Ion Beams

et al. 1983

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Characteristics of maskless patterning of Cr films using focused Sb+ ion implantation have been investigated.Dose and depth dependence of the etching rate of Sb-implanted layers during plasma etching using CC1 4 were measured.Sb profiles were also measured by Rutherford backscattering techniques.It was found that a sharp threshold dose exists to form an etch-resistant layer by Sb implantation.It was also fotind that a latent image of an Sb implanted pattern at a dose Ž 3.8x10 5 /cm 2 was developed by the plasma etching, and that Cr patterns with a thickness of a few hundred nanometers were formed by the present maskless patterning technique.

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Section: Resultsmentioning

confidence: 47%

Section: Methodsmentioning

confidence: 99%

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Maskless Patterning of Cr Films Using Focused Ion Beams

et al. 1983

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“…In the point of the beam energy, this figure shows that the etched depth of the films implanted with a 60 keV ion beam is smaller than that of 100 keV ion beam implanted films. This is because Ga concentrations at the surface of the film increase as the beam energy decreases [7]. The lower ion beam energy in FINP technique is suitable for device fabrications, from viewpoints of degradation of device characteristics by ion beam irradiation and enhanced selectivity.…”

Section: Focused Ion Beam Imnlunted Nb Putterning (Finp) Techniauementioning

confidence: 97%

Fabrication of Nb/AlO/sub x//Nb tunnel junctions using focused ion beam implanted Nb patterning (FINP) technique

Akaike

Fujimaki

Takai

et al. 1993

IEEE Trans. Appl. Supercond.

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We have applied the Focused ion beam Implanted Nb Patterning (FINP) technique to fabrication process of Nb/AlOx/Nb tunnel junctions. The essence of this technique is that Ga ion implanted layers in Nb films serve as a masking layer during reactive ion etching (RIE) in CF4 plasma. Uniform and reproducible patterns of 0.3 x 0.3 pm2 have been formed by this technique. The tunnel junction fabricated with a 60 keV ion beam had the quality parameter Vm of 48 mV, which indicates no degradation of junction characteristics by focused ion beam irradiation. We have also investigated the CF4 plasma etching characteristics of Ga ion implanted Nb films and have found that an improvement in the characteristics is achieved by lowering beam energy and raising CF4 gas pressure.

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“…Chromium (Cr) is probably the most widely utilized hard mask material for plasma etching because of its high selectivity to silicon and its compound when using fluorine or chlorine based etching chemistry. Use of Cr film was studied since 1976, [7][8][9][10] and its applications include photomask as the opaque layer, etching mask in semiconductor device fabrication, and electrodes for thin film transistor liquid crystal displays and field emission displays (FEDs). [11][12][13][14] Pattern transferring from the resist structure into Cr can be carried out either by lift-off or direct etching techniques using the resist as mask.…”

Section: Introductionmentioning

confidence: 99%

Chromium oxide as a hard mask material better than metallic chromium

Aydinoglu

Saffih

Dey

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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In nanofabrication, use of thin resist is required to achieve very high resolution features. But thin resist makes pattern transferring by dry etching difficult because typical resist has poor resistance to plasma etching. One widely employed strategy is to use an intermediate hard mask layer, with the pattern first transferred into this layer, then into the substrate or sublayer. Cr is one of the most popular hard etching mask materials because of its high resistance to plasma etching. Cr etching is carried out in O 2 and Cl 2 or CCl 4 environment to form the volatile etching product CrO 2 Cl 2 , but addition of O 2 gas leads to fast resist etching. In this work, the authors show that Cr 2 O 3 can be etched readily in a Cl 2 /O 2 gas mixture with less oxygen than needed for Cr etching, because Cr 2 O 3 contains oxygen by itself. Thus it is easier to transfer the resist pattern into Cr 2 O 3 than into Cr. For the subsequent pattern transferring into the substrate here silicon using nonswitching pseudo-Bosch inductively coupled plasma-reactive ion etching with SF 6 /C 4 F 8 gas and Cr or Cr 2 O 3 as mask, it was found that the two materials have the same etching resistance and selectivity of 100:1 over silicon. Therefore, Cr 2 O 3 is a more suitable hard mask material than Cr for pattern transferring using dry plasma etching.

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Gas plasma etching of ion implanted chromium films

Cited by 23 publications

References 0 publications

Maskless Patterning of Cr Films Using Focused Ion Beams

Maskless Patterning of Cr Films Using Focused Ion Beams

Fabrication of Nb/AlO/sub x//Nb tunnel junctions using focused ion beam implanted Nb patterning (FINP) technique

Chromium oxide as a hard mask material better than metallic chromium

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