Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers

Jarndal, Anwar; Hussein, Ahmed S.; Crupi, Giovanni; Caddemi, Alina

doi:10.1002/jnm.2585

Cited by 35 publications

(31 citation statements)

References 31 publications

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“…As a result, S R is determined by the scattering mechanisms for the electrons in the gate-source channel [27]. In order to obtain accurate values for mobility, the nonlinear formalism of the polarization-induced field as a function of Al mole fraction in AlmGa1-mN/GaN HEMTs have been assumed, as well as taking into account intersubband coupling coefficients 1…”

Section: Methodsmentioning

confidence: 99%

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Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

Yahyazadeh

Hashempour

2019

JST

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A numerical model for the source-drain channel resistance based high electron mobility transistors has been developed that is capable to predict accurately the effects of polarization Coulomb Field Scattering (PCF), multi sub-band on source-drain channel resistance. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. In addition, to develop the model, accurate two-dimensional electron gas mobility and modified wave function in barrier AlGaN have been used. According to the numerical calculations, the effect of multi sub-band and PCF scattering on the increase of source-drain channel resistance is 35% and 65%, respectively, with the effect of PCF being almost twice as high as multi sub-band. The calculated model results are in very good agreement with existing experimental data for high electron mobility transistors device.

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Section: Methodsmentioning

confidence: 99%

“…GaN high electron mobility transistors (HEMTs) are used in high frequency, high power, and robust low-noise applications [1][2][3]. Linearity is one of the most crucial figures of merit for the application of power amplifiers.…”

Section: Introductionmentioning

confidence: 99%

Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

Yahyazadeh

Hashempour

2019

JST

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“…Although the GaN-HEMT devices are primarily intended for high power and high temperature operation for highfrequency applications, [26][27][28][29] a growing attention is being given also for high-frequency low-noise applications. [30][31][32] However, in order to build large-signal and noise models for high-power and low-noise amplifiers, the extraction of the small-signal equivalent circuit plays a crucial role. Additionally, the physical-based equivalent-circuit model enables a better feedback than the black-box models (eg, artificial neural networks 33,34 ), in order to gain a deeper understanding of the inner physics of the device.…”

Section: Small-signal Modelingmentioning

confidence: 99%

2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

Jarndal

Alim

Raffo

et al. 2021

Int J RF Microw Comput Aided Eng

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In this paper, a comparative analysis has been conducted on GaN high electron mobility transistor (HEMT) technology on Si and SiC substrates. Smallsignal characteristics of 2-mm GaN-on-Si and GaN-on-SiC devices have been investigated. Both devices have the same gate length of 0.5 μm. Special emphasis has been put on the temperature dependence of the buffer/substrate loading effects arising from the Si substrate. As a matter of fact, the "cold" pinch-off admittance (Y-) parameter measurement showed significant loading effect for the Si-based device with respect to the SiC-based one. This has been clearly supported by the analysis of the extracted parameters of the smallsignal equivalent-circuit model. The model was also validated by simulating active scattering (S-) parameters, which showed a very good agreement with the corresponding measurements. The results of this paper highlight the impact of buffer/substrate leakage currents on small-signal characteristics and the importance of taking this into account during the modeling phase of the GaN-on-Si HEMT technology. The lower thermal conductivity of this substrate increases the internal temperature, thus stimulating more leakage and reduction of the device power efficiency.

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“…GaN‐high electron mobility transistor (HEMT) is an optimal device for designing microwave high‐power circuits . It is mainly due to the outstanding properties of GaN material such as wide band gap, high electron mobility, high thermal conductivity, and high electron velocity.…”

Section: Introductionmentioning

confidence: 99%

On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

Jarndal

Arivazhagan

Nirmal

2020

Int J RF Microw Comput Aided Eng

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In this article, threading dislocations and its impact on the electrical and thermal performance of GaN-on-Diamond (Dia), -SiC, and -Si high electron mobility transistor (HEMT) has been investigated. TCAD simulation of GaN-HEMT is performed with various buffer traps to mimic the lattice mismatch/dislocation density at GaN/Si, GaN/SiC, and GaN/Dia interface. It has been found that, the dislocations not only induce traps, but also degrade the thermal conductivity of the GaN-buffer. This accordingly could deteriorate the thermal characteristic of GaN-on-Dia, which has higher lattice mismatch with respect to GaN-on-SiC. This investigation showed that the growth process of GaN-on-Dia should be optimized in order to reduce the threading dislocations. This accordingly could dramatically further improve its outstanding thermal characteristics with respect to GaN-on-SiC and GaN-on-Si devices. K E Y W O R D S diamond and silicon carbide, GaN, HEMT, silicon, substrate

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Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers

Cited by 35 publications

References 31 publications

Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

2‐mm‐gate‐periphery GaN high electron mobility transistor s on SiC and Si substrates: A comparative analysis from a small‐signal standpoint

On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates

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