Considering the desired characteristics of functionally gradient materials (FGM), such as good thermal and wear resistance, this paper investigates the mechanical behavior of FGM microgripper under DC voltage and temperature variation. It is assumed that the two microbeams of the FGM microgripper are mounted symmetrically against each other, and the volume of ceramic varies exponentially with microbeam thickness. The nonlinear equations governing the static and dynamic deflection of microbeams due to the application of DC voltage and temperature variation are derived and solved using the step-by-step linearization method and the Galerkin method. In previous studies, the mechanical behavior of a microgripper with homogenous and the same material has been investigated; in this paper, the response and stability of the FGM microgripper against DC voltage and temperature variation are investigated. Also, the effect of geometrical dimensions, ceramic volume, and its variations with microbeam thickness on the mechanical behavior and system stability is studied.
An analytical-numerical model for the total mobility of AlGaN/GaN based high electron mobility transistors has been developed which is capable to accurately predict the effects of depletion layer thickness on the total mobility with different temperature, gate source biases. In addition, we should take into account the combined contributions from each of the individual electron scattering mechanisms. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well. Close agreement with the experimental data confirms the validity of the present model.
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