The effects of depletion layer on negative differential conductivity in AlGaN/GaN high electron mobility transistor

Yahyazadeh, Rajab; Asgari, Asghar; Kalafi, M.

doi:10.1016/j.physe.2005.11.011

Cited by 10 publications

(13 citation statements)

References 17 publications

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“…The traps within the AlGaN barrier can be assumed as the barrier capacitance, C AlGaN , which is related to the depletion distance of d 1 and d 2 (6).To calculate the total drain current, both 2DEG channel and AlGaN barrier currents have been calculated. The expression of device current can be obtained as ( [6,7) ( ) Where d 2 , the depletion layer thickness has been used [6]. To calculate the exact electrical properties in HEMTs, one need to include the electron traps effects such as interface and surface traps, and GaN barrier traps in the calculation.…”

Section: Model Descriptionmentioning

confidence: 99%

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Effect of Temperature on the Cut off Frequency of AlGaN/GaN High Electron Mobility Transistors

2014

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An analytical-numerical model for the drain source and gate source currents of AlGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of temperature on the cut off frequency for different gate source and drain source biases. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a selfconsistent solution of the Schrödinger and Poisson equations. In addition, current in the barrier of AlGaN and traps density in AlGaN are taken in to account. The calculated model results are in very good agreement with existing experimental data for HEMTs devices.

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Section: Model Descriptionmentioning

confidence: 99%

“…Sheet carrier concentrations and threshold voltage of two dimensional electron gas as a function of temperature in comparison with existence experimental data from Ref [6,8]…”

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confidence: 92%

Effect of Temperature on the Cut off Frequency of AlGaN/GaN High Electron Mobility Transistors

2014

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“…The drain-source current within 2DEG channel (I 2DEG ), in linear and saturation regimes are given by the following relations [5,13]:…”

Section: Model Descriptionmentioning

confidence: 99%

“…The capacitance, C, is equivalent capacitance for the capacitances of AlGaN barrier (C AlGaN ) [5], band bending in GaN (C GaN ) [13], interface traps (C S ) [14], spacer layer [15] and two dimensional electron gas For the energy levels corresponding to the two dimensional electron gas, we assumed the presence of five sub-bands within the interface single-well.…”

Section: Model Descriptionmentioning

confidence: 99%

“…Together with these high field properties, the high saturated electron drift velocity (~10 7 cm/s) in GaN can be exploited for superior high frequency performance. More recently, high performance GaN-based transistors such as high electron mobility transistors have been fabricated and reported by several group [5,6]. The effect of temperature on the electronic current of two dimensional quantum well was previously observed and was related on electron threshold voltage without including optical phonon scattering [7,8].…”

Section: Introductionmentioning

confidence: 97%

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Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT)

Yahyazadeh¹,

Hashempour²

2011

JMSE-A

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An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in high electron mobility transistors has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and partially occupied sub-bunds in the interface quantum well. In addition temperature dependent of band gap, quantum well electron density, threshold voltage, mobility of electron, dielectric constant, polarization induce charge density in the device are also taken into account. The calculated model results are in very good agreement with existing experimental data for high electron mobility transistors device.

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Investigating the effects of capping layer on optical gain of nitride based semiconductor nanostructure lasers

2017

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The effects of depletion layer on negative differential conductivity in AlGaN/GaN high electron mobility transistor

Cited by 10 publications

References 17 publications

Effect of Temperature on the Cut off Frequency of AlGaN/GaN High Electron Mobility Transistors

Effect of Temperature on the Cut off Frequency of AlGaN/GaN High Electron Mobility Transistors

Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT)

Investigating the effects of capping layer on optical gain of nitride based semiconductor nanostructure lasers

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