Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS

Abstract

A numerical model for the source-drain channel resistance based high electron mobility transistors has been developed that is capable to predict accurately the effects of polarization Coulomb Field Scattering (PCF), multi sub-band on source-drain channel resistance. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. In addition, to develop the model, accurate two-dimensional electron gas mobility and modified wave function in barrier AlGaN have been used. According to the numerical calculations, the effect of multi sub-band and PCF scattering on the increase of source-drain channel resistance is 35% and 65%, respectively, with the effect of PCF being almost twice as high as multi sub-band. The calculated model results are in very good agreement with existing experimental data for high electron mobility transistors device.

Effect of Hydrostatic Pressure and Temperature on Quantum Confinement of AlGaN/GaN HEMTs

“…AlGaN/GaN high electron mobility transistor (HEMT) devices are considered to be very promising candidates for high-speed and high-power applications [1,2]. These devices offer advantages such as high breakdown voltage, high charge density, and good electron mobility [3][4][5]. The formation of the 2-D electron gas (2DEG) in these devices is the heart of the device operation and has been studied in great detail in the literature.…”