Random Telegraph Signal Statistical Analysis using a Very Large-scale Array TEG with 1M MOSFETs

Abe, Kenichi; Sugawa, Shigetoshi; Watabe, S.; Miyamoto, Naoto; Teramoto, Akinobu; Kamata, Yutaka; Shibusawa, K.; Toita, Masato; Ohmi, Tadahiro

doi:10.1109/vlsit.2007.4339696

Cited by 41 publications

(43 citation statements)

References 2 publications

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“…The wide spread in amplitudes has motivated the development of measurement techniques enabling the fast assessment of the V T change induced by RTN in a large array of similar transistors, using a dedicated test chip lay out (25)(26)(27)(28)). An example of such a test circuit and measurement scheme is represented in Fig.…”

Section: Characterization and Physics Of Rtnmentioning

confidence: 99%

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Simoen¹,

Kaczer²,

Toledano-Luque³

et al. 2011

ECS Trans.

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An overview is given on Random Telegraph Noise (RTN) in MOS-based devices. First, the basic properties and physics are briefly outlined, emphasizing the stochastic nature of its main parameters: the capture and emission time constant, while its amplitude is fixed and specific for each trap. Different techniques exist to characterize RTN in MOS devices, either by time or frequency domain measurements. A distinction can also be made between dynamic equilibrium methods like noise spectroscopy or transient measurements, based on a Deep-Level Transient Spectroscopy approach. While single-device based RTN measurements are still of high value, for modern circuit applications, techniques are being developed allowing a fast assessment of RTN in a large number of transistors. The scaling of CMOS technologies to the 32 nm and below raises the issue of variability induced either by random dopant fluctuations or in general, by random charge fluctuations, both spatially and in time. As will be seen, the presence of traps responsible for RTN brings about an additional source of variability which may become dominant in future memories. Finally, it will be shown that RTN is not only a fundamental component of 1/f noise but the same oxide traps are also largely responsible for the Bias Temperature Instability (BTI) in scaled MOSFETs. This leads to a selfconsistent model for BTI and a stochastic approach towards the reliability prediction of deep submicron CMOS technologies.

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Section: Characterization and Physics Of Rtnmentioning

confidence: 99%

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Simoen¹,

Kaczer²,

Toledano-Luque³

et al. 2011

ECS Trans.

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“…And the vertical-axis and horizontal-axis represent the number of pixels and Digital Number (DN) of NL respectively. Secondly, the noise histogram of a CIS with not only the Gaussian component noise but also the non-Gaussian component noise is calculated based on the work in [4], [11], [14], [28]- [31] and determined by the exponential distribution with two parameter α and β, which is shown in Fig. 10.…”

Section: Rts Noise Modeling In Spatial Domainmentioning

confidence: 99%

A Novel Modeling and Evaluating for RTS Noise on CMOS Image Sensor in Motion Picture

Deng

Ryu

Nishimura

2010

IEICE Trans. Inf. & Syst.

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SUMMARYThe precise noise modeling of complementary metal oxide semiconductor image sensor (CMOS image sensor: CIS) is a significant key in understanding the noise source mechanisms, optimizing sensor design, designing noise reduction circuit, and enhancing image quality. Therefore, this paper presents an accurate random telegraph signal (RTS) noise analysis model and a novel quantitative evaluation method in motion picture for the visual sensory evaluation of CIS. In this paper, two main works will be introduced. One is that the exposure process of a video camera is simulated, in which a Gaussian noise and an RTS noise in pinnedphotodiode CMOS pixels are modeled in time domain and spatial domain; the other is that a new video quality evaluation method for RTS noise is proposed. Simulation results obtained reveal that the proposed noise modeling for CIS can approximate its physical process and the proposed video quality evaluation method for RTS noise performs effectively as compared to other evaluation methods. Based on the experimental results, conclusions on how the spatial distribution of an RTS noise affects the quality of motion picture are carried out. key words: CMOS image sensor, noise modeling, random telegraph signal noise, video quality

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“…Random telegraph signal (RTS) is a temporal variation in I ds (V th ) caused by the capture and emission of mobile charge carriers, and it has been studied for over two decades [1][2][3][4][5][6]. Since the amplitude of RTS is proportional to the inverse of the MOSFET channel area [3], memory devices manufactured using the most advanced fabrication technologies are facing severe challenges due to this phenomenon.…”

Section: Introductionmentioning

confidence: 99%

“…Being different from flash memory devices which have thick gate-oxide films, SRAM devices until recently were not considered to be seriously affected by RTS because they utilize thin gate-oxide films in accordance with MOS scaling [7]. However, because V th variation due to RTS eventually (with scaling) will become comparable to that due to random dopant fluctuations (RDF) [5] -a major source of degradation in SRAM characteristics [8] -studies of the impact of RTS on highly scaled SRAM have been reported [9][10][11][12]. Although it is still controversial how much the SRAM minimum operation voltage (V min ) is degraded by RTS, SRAM designers should allocate some design margin for RTS in addition to a (larger) design margin for RDF.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the relationship between random telegraph signal and negative bias temperature instability

Tsukamoto

Toh

Shin

et al. 2010

2010 IEEE International Reliability Physics Symposium

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Abstract-Random telegraph signal (RTS) is shown to be an intrinsic component of the shift in MOSFET threshold voltage (V th ) due to bias temperature instability (BTI). This is done by starting from a well-known model for negative BTI (NBTI), to derive the formula for RTS-induced V th shift. Based on this analysis, RTS simply contributes an offset in NBTI degradation, with an acceleration factor that is dependent on the gate voltage and temperature. This is verified by 3-dimensional (3-D) device simulations and measurements of 45nm-node bulk-Si PMOS transistors. It has an important implication for design of robust SRAM arrays in the future: design margin for RTS should not be simply added, because it is already partially accounted for within the design margin for NBTI degradation.

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Random Telegraph Signal Statistical Analysis using a Very Large-scale Array TEG with 1M MOSFETs

Cited by 41 publications

References 2 publications

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

A Novel Modeling and Evaluating for RTS Noise on CMOS Image Sensor in Motion Picture

Analysis of the relationship between random telegraph signal and negative bias temperature instability

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