(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

Abstract

An overview is given on Random Telegraph Noise (RTN) in MOS-based devices. First, the basic properties and physics are briefly outlined, emphasizing the stochastic nature of its main parameters: the capture and emission time constant, while its amplitude is fixed and specific for each trap. Different techniques exist to characterize RTN in MOS devices, either by time or frequency domain measurements. A distinction can also be made between dynamic equilibrium methods like noise spectroscopy or transient measurements, based on a Deep-Level Transient Spectroscopy approach. While single-device based RTN measurements are still of high value, for modern circuit applications, techniques are being developed allowing a fast assessment of RTN in a large number of transistors. The scaling of CMOS technologies to the 32 nm and below raises the issue of variability induced either by random dopant fluctuations or in general, by random charge fluctuations, both spatially and in time. As will be seen, the presence of traps responsible for RTN brings about an additional source of variability which may become dominant in future memories. Finally, it will be shown that RTN is not only a fundamental component of 1/f noise but the same oxide traps are also largely responsible for the Bias Temperature Instability (BTI) in scaled MOSFETs. This leads to a selfconsistent model for BTI and a stochastic approach towards the reliability prediction of deep submicron CMOS technologies.

Nano-Intrinsic True Random Number Generation: A Device to Data Study

“…Temporal behavior of RTN in ReRAMs is repeatedly shown to be highly random, therefore, it could be used as random source for generating random bits, which is the aim of this work. RTN is often observed in a low frequency regimes of scaled devices and is frequently described as circuit "designer's nightmare" [34]. RTN behavior could be described with a number of time constants, shown in this paper with τ .…”

Stochastic Memory Devices for Security and Computing

“…[70] This situation is shown in Figure 3b, where a CF with simplified cylindrical geometry is locally depleted from carriers by a surface electron trap fluctuating between a neutral and a negatively charged state. [125] To understand the impact of RTN on device behavior, Figure 3a shows the experimental current-voltage (I-V) characteristics for an RRAM device with HfO x switching layer. [124] Figure 3c shows electrostatic simulations of the electron carrier density within the CF in the presence of a negatively charged defect at the surface of the CF.…”

Group Behavior of Nanoparticles Translocating Multiple Nanopores

“…As the schematic diagram in Figure 1(b) shows, the ionic current appears in two states with time, i.e., the open pore state and the blockage state, denoted "o" and "b" in the subscript of related variables, respectively. The dwell time of these two states obey exponential distribution 49,50 . Following the expression of the PSD value of RTN 49 , the PSD of the translocation waveform of ionic current can be written as…”

“…The dwell time of these two states obey exponential distribution 49,50 . Following the expression of the PSD value of RTN 49 , the PSD of the translocation waveform of ionic current can be written as…”