Radiation Imaging Detectors Using SOI Technology

Arai, Y.; Kurachi, Ikuo; Iniewski, Krzysztof

doi:10.2200/s00750ed1v01y201701eet009

Cited by 3 publications

(2 citation statements)

References 64 publications

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“…The layer underneath the BOX can be used as a sensor layer. Several well structures give the possibility to isolate the transistor from any influence of charge build-up in the BOX (the issue initially seen in FD-SOI technology [28,29]). The HV-SOI technology allows access to the handling wafer/substrate using vias to create a charge collecting node as well as provide bias to the sensor A standard CMOS circuit can be realized in the logic layer above BOX.…”

Section: Hv-soimentioning

confidence: 99%

Overview and perspectives of depleted CMOS sensors for high radiation environments

Hemperek¹

2018

Proceedings of the 26th International Workshop on Vertex Detectors — PoS(Vertex 2017)

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To cope with increased radiation levels expected at the HL-LHC new approaches are being investigated using monolithic CMOS pixel detectors where readout electronics and depleted charge collection layer are combined. Those devices rely on radiation hard process technology, multiple nested wells, high resistivity substrates and ability to apply high voltage bias to achieve significant depletion depths. They can be thinned and backside processed for biasing. Since 2014, members of more than 20 groups in ATLAS are collaborating in CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterization with the goal to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. Many CMOS technology vendors have been approached in this effort. This contribution introduces challenges for the usage of CMOS pixel detectors at HL-LHC and gives a summary of different concepts and the current state of designs of depleted CMOS prototypes.

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Section: Hv-soimentioning

confidence: 99%

Overview and perspectives of depleted CMOS sensors for high radiation environments

Hemperek¹

2018

Proceedings of the 26th International Workshop on Vertex Detectors — PoS(Vertex 2017)

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“…We have developed a new active pixel sensor for heavy ions having energies compatible with the reaction products of the most common neutron converter materials. The sensor chip is based on SOI CMOS technology (SOIPIX) [11]. In this paper, we report the monolithic architecture and the preliminary tests with alpha source.…”

Section: Introductionmentioning

confidence: 99%

Development and characterization of a novel alpha particle SOI pixel sensor for neutron detection

et al. 2022

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Semiconductor sensors for neutron detection have been initially proposed as direct replacement of 3He detectors but have recently raised interest in imaging systems. We have developed a monolithic sensor with high spatial granularity in SOIPIX technology for the detection of alpha particles of energy compatible with the reaction products of neutrons with typical converter materials. The chipset is composed by the main pixel matrix and the test structures needed for a better understanding of the chip functionality and for studying the electronic tuning strategies. The fabricated prototypes have been recently delivered and the first tests under alpha source have been performed. In this paper we will present the proposed devices and the results of the experimental characterization.

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