2022
DOI: 10.1088/1748-0221/17/08/c08012
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Development and characterization of a novel alpha particle SOI pixel sensor for neutron detection

Abstract: Semiconductor sensors for neutron detection have been initially proposed as direct replacement of 3He detectors but have recently raised interest in imaging systems. We have developed a monolithic sensor with high spatial granularity in SOIPIX technology for the detection of alpha particles of energy compatible with the reaction products of neutrons with typical converter materials. The chipset is composed by the main pixel matrix and the test structures needed for a better understanding of the chip functional… Show more

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Cited by 2 publications
(2 citation statements)
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“…In the case of 10 B with small cavities the efficiency can reach ∼30%. This is only a theoretical value because, due to their high aspect ratio, the cavities are not so easy to fill completely, as reported in [14].…”
Section: Monte Carlo Simulationmentioning
confidence: 89%
“…In the case of 10 B with small cavities the efficiency can reach ∼30%. This is only a theoretical value because, due to their high aspect ratio, the cavities are not so easy to fill completely, as reported in [14].…”
Section: Monte Carlo Simulationmentioning
confidence: 89%
“…In this paper, we present a monolithic pixel sensor for thermal neutron imaging developed in the framework of the INFN DEEP_3D project (Detectors for neutron imaging with Embedded Electronics Produced in 3D technology) [ 18 ]. The detector is fabricated using CMOS SOI technology with Deep Reactive-Ion Etching (DRIE) post-processing on the backside, aiming at obtaining high aspect-ratio cavities to be filled with neutron converters.…”
Section: Introductionmentioning
confidence: 99%