In the last years, high-resolution time tagging has emerged as a promising tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50 ps and event average repetition rates of tens of MHz on sensor pixels having a pitch of 50 μm are typical minimum requirements. This poses an important scientific and technological challenge on the development of particle sensors and processing electronics. The TIMESPOT initiative (which stands for TIME and SPace real-time Operating Tracker) aims at the development of a full prototype detection system suitable for the particle trackers of the next-to-come particle physics experiments. This paper describes the results obtained on the first batch of TIMESPOT silicon sensors, based on a novel 3D MEMS (micro electro-mechanical systems) design. We demonstrate that following this approach, the performance of other ongoing silicon sensor developments can be matched and overcome. In addition, 3D technology has already been proved to be robust against radiation damage. A time resolution of the order of 20 ps has been measured at room temperature suggesting also possible improvements after further optimisations of the front-end electronics processing stage.
Abstract-In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2×10 16 1 MeV equivalent n/cm 2 ) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.
This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.
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