Quantum correction for DG MOSFETs

Abstract

The characteristics of modern semiconductor devices are strongly influenced by quantum mechanical effects. Due to this fact, purely classical device simulation is not sufficient to accurately reproduce the device behavior. For instance, the classical semiconductor equations have to be adapted to account for the quantum mechanical decrease of the carrier concentration near the gate oxide. Several available quantum correction models are derived for devices with one single inversion layer and are therefore only of limited use for thin double gate (DG) MOSFETs where the two inversion layers interact. We present a highly accurate quantum correction model which is even valid for extremely scaled DG MOSFET devices. Our quantum correction model is physically based on the bound states that form in the Si film. The eigenenergies and expansion coefficients of the wave functions are tabulated for arbitrary parabolic approximations of the potential in the quantum well. Highly efficient simulation of DG MOSFET devices scaled in the decananometer regime in TCAD applications is made possible by this model.

Two‐dimensional models for quantum effects on short channel electrostatics of lightly doped symmetric double‐gate MOSFETs

“…The work published by Li and Yu [4] presented a double‐gate (DG) model derived from hydrodynamic transport; however, it is a simulation‐based model that relies on iterations. While Wagner , et al [5] produced a DG model based on diffusive transport, it is also a computational‐based model. Both [4, 5] do not provide explicit models for the potential or the threshold voltage.…”

“…While Wagner , et al [5] produced a DG model based on diffusive transport, it is also a computational‐based model. Both [4, 5] do not provide explicit models for the potential or the threshold voltage. Additionally, the 2D DG threshold voltage roll off model developed by Chen , et al [6] did not include drain induced barrier lowering (DIBL) effects.…”

Approach for designing and modelling of nanoscale DG MOSFET devices using Kriging metamodelling technique

“…For instance, the short‐channel effect leads to less control over the potential distribution in addition to the overlap of the depletion regions associated with both channel and source/drain junctions [2]. Due to the quantum mechanical effect, the reduction of the channel thickness leads to the confinement of carriers in a thin layer, which affects the transport and scattering properties [3]. Moreover, the intensive applied voltages allow carriers to be accumulated in the oxide near the drain side.…”

Layer Thickness and Stress-Dependent Correction for InGaAs Low-Field Mobility in TCAD Applications

“…Previously, quantum correction models for TCAD simulation were developed to account for confinement induced by one semiconductor/insulator interface in [7]- [9], and recently, it was extended to account for the impact of geometric quantum confinement in double-gate structures [4], [10].…”