Abstract:A layer thickness and stress-dependent correction for InGaAs low-field mobility in technology computer-aided design applications is presented. This correction is based on a simplified phonon-limited mobility, which accounts for the geometrical quantization and stress effects. The stress effect is modeled with a linear deformation potential model for the valley energy change and a stress-related change of the effective mass and nonparabolicity of valley. The model shows good agreement with known literature data… Show more
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