Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

Srinivasan, Vijay; Chopra, Saurabh; Karkare, P.; Bafna, P.; Lashkare, Sandip; Kumbhare, Pankaj; Kim, Y.; Srinivasan, S.; Kuppurao, Satheesh; Lodha, Saurabh; Ganguly, Udayan

doi:10.1109/led.2012.2209394

Cited by 86 publications

(23 citation statements)

References 12 publications

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“…The data show that large selector NL1/2 is needed to accommodate selector variability for achieving the same RM. Most selectors reported in [14] and [24]- [26] show NL1/2 over 10 3 , but hardly exceeding 10 4 . Fig.…”

Section: Simulation Resultsmentioning

confidence: 87%

Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Zhang

Cosemans

Wouters

et al. 2015

IEEE Trans. Electron Devices

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This paper investigates the impact of cell variability on the read performance of the one-selector one-resistor (1S1R) cross-point array. A variability-aware array-sizing analysis methodology is introduced, considering three independent variability sources, namely, the data pattern randomness, the selector variability, and the resistive switching element (RSE) variability. By analyzing the impact of each variability factor separately, we show that the data pattern randomness is not an important contributor for the read margin (RM) degradation. While the intrinsic RSE variability reflected in the narrowing of the ON/ OFF RSE window degrades the RM, the selector variability adds to this further, mainly affecting the ON-state readout current, and causing extra RM degradation. To accommodate cell variability and guarantee acceptable read performance, additional cell performance margin is required. The 1S1R requirements are extrapolated for 1-Mb array, assuming variability-affected cells. It is found that, with a typical selector variability, a minimal RSE window of 5 and a selector half-bias nonlinearity of ∼8000 are required to achieve at least 10% RM.Index Terms-Cross-point array, Monte Carlo, one-selector one-resistor (1S1R), read margin (RM), resistive random access memory, selector, SPICE simulation, variability.

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Section: Simulation Resultsmentioning

confidence: 87%

Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Zhang

Cosemans

Wouters

et al. 2015

IEEE Trans. Electron Devices

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“…In recent years, several device technologies, such as vertical channel transistors (VCTs) and two terminal selective devices, have been reported [1,2,3]. Essential characteristics of a selective device include simple structure and high performance.…”

Section: Introductionmentioning

confidence: 99%

Investigation of in-situ doping profile for N+/P/N+ bidirectional switching device using Si1−xGex/Si/Si1−xGex structure

Roh

Song

2015

IEICE Electron. Express

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We present a novel junction device with bidirectional current flow for switching devices in a high density spin torque transfer magnetic random access memory (STT-MRAM). In this structure, an N+ type strained SiGe material is adopted as a conduction layer to generate higher electron mobility and a flatter doping profile. A SiGe/Si/SiGe heterojunction structure is also used to obtain a better I on /I off ratio due to a steeper junction profile. It is confirmed by 3D simulation that this structure provides higher current drivability and I on /I off ratio. After the simulation, a junction device with N+ Si 0.8 Ge 0.2 /P Si/N+ Si 0.8 Ge 0.2 and an area of 4 × 4 um 2 is fabricated and evaluated for bidirectional current flow. From the results obtained, we propose that this bidirectional switching device with a heterojunction structure is a promising candidate for a high density STT-MRAM.

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“…This is because the performance of the selector device as a switch element can increase the array size by minimizing the leakage current through a sneak path, which is one of the inherent drawbacks of the cross-point architecture. Thus, the conventional silicon-based device such as poly-si diode, and vertical BJT have been utilized through the high-quality poly silicon and epitaxial growth technique [2], [3]. However, these processes require the high process temperature, and it is not suitable for 3D stacking technology.…”

Section: Introductionmentioning

confidence: 99%

Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

Woo

Lee

Cha

et al. 2014

IEEE Electron Device Lett.

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We present a novel approach to realize bidirectional/bipolar current-voltage characteristics for crosspoint selector device application. These utilize the instability of Cu ions in filament state for switch elements. The conductive filament instability was controlled by the compliance current with which the filament was formed. For in-situ control of the device, a complementary atom switch concept was implemented. The proposed device presents another attractive selector among the field of bidirectional selectors with the unique attributes such as the extremely low leakage current and the exponentially increased conduction behavior.Index Terms-Selector device, cross-point array memory, access device, atom switch.

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Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

Cited by 86 publications

References 12 publications

Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Investigation of in-situ doping profile for N+/P/N+ bidirectional switching device using Si<sub>1−x</sub>Ge<sub>x</sub>/Si/Si<sub>1−x</sub>Ge<sub>x</sub> structure

Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application

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