Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Zhang, Leqi; Cosemans, Stefan; Wouters, Dirk J.; Groeseneken, G.; Jurczak, M.; Govoreanu, B.

doi:10.1109/ted.2015.2439958

Cited by 23 publications

(12 citation statements)

References 21 publications

(32 reference statements)

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“…Among various concepts of selector device, programmable metallization cell (PMC) is one of the most promising candidates; it exhibits excellent threshold switching characteristics and simple material stacks [10,11,12]. However, the issue of variation on threshold switching voltage becomes a major problem in one-selector-one-resistor (1S1R) array integration and operation [9,13,14]. In our previous work, the SiTe based PMC selector was improved by annealing but still with large variation [15].…”

Section: Introductionmentioning

confidence: 99%

A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

Song

Cao

et al. 2019

Nanomaterials

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Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selectivity and improve the threshold voltage variation. Compared to single-layer devices, this dual-layer device exhibits higher selectivity (>107) and better threshold voltage uniformity with less than 5% fluctuation during 200 DC switching. The improvement is attributed to good control on the location of the filament formation and rupture after introducing a HfO2 layer. It is deduced that a major factor consists of the difference of Ag ions mobility between SiTe and HfO2 due to the grain boundary quantity.

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Section: Introductionmentioning

confidence: 99%

A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

Song

Cao

et al. 2019

Nanomaterials

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“…The Off resistance in the BVMR determines the sneak‐path current level, which also means that its ratio to the upper‐bound resistance in the non‐MR will affect the size of scalability. For the Ta–HfO 2 non‐MR used, our estimate showed that the read margin [ 31 ] maintained a value above 10% with an array width N > 10 5 (Figure 4d and Figure S15, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

An Effective Sneak‐Path Solution Based on a Transient‐Relaxation Device

Sun

et al. 2022

Advanced Materials

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An efficient strategy for addressing individual devices is required to unveil the full potential of memristors for high‐density memory and computing applications. Existing strategies using two‐terminal selectors that are preferable for compact integration have trade‐offs in reduced generality or functional window. A strategy that applies to broad memristors and maintains their full‐range functional window is proposed. This strategy uses a type of unipolar switch featuring a transient relaxation or retention as the selector. The unidirectional current flow in the switch suppresses the sneak‐path current, whereas the transient‐relaxation window is exploited for bidirectional programming. A unipolar volatile memristor with ultralow switching voltage (e.g., <100 mV), constructed from a protein nanowire dielectric harvested from Geobacter sulfurreducens, is specifically employed as the example switch to highlight the advantages and scalability in the strategy for array integration.

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“…If the switching current of RRAM element is 20 uA, a selector with nonlinearity of about 4000 is required to meet all the constraints [14]. However, when it comes to the selector variability and RRAM element variability, the requirements of half-bias nonlinearity increases to 8000 [15].…”

Section: Basis Theory For Simulationmentioning

confidence: 99%

Exploration of selector characteristic based on electron tunneling for RRAM array application

Song

Liu

et al. 2017

IEICE Electron. Express

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Selector is indispensable to suppress leakage current for crossbar array of resistive random access memory. According to the nonlinear requirement, electron tunneling mechanism is firstly attempted. However, earlier studies discovered drawbacks of insufficient current density. This work aims at exploring the idealized characteristic of selector based on FowlerNordheim tunneling mechanism by selecting various materials and structures. Thereinto, current density transforms to drive voltage according to corresponding current density standard. Simulation results indicate that metal/insulator barrier and insulator thickness play key roles in determining drive voltage and nonlinearity of the tunneling selectors. Specifically, metal/insulator barrier influence drive voltage and nonlinearity, while insulator thickness mainly influence drive voltage. Thus it can help comprehend restrictions of tunneling mechanism and attempt other improvement directions.

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Cell Variability Impact on the One-Selector One-Resistor Cross-Point Array Performance

Cited by 23 publications

References 21 publications

A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

An Effective Sneak‐Path Solution Based on a Transient‐Relaxation Device

Exploration of selector characteristic based on electron tunneling for RRAM array application

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