Experimental evidence of reduction of ultrathin TiO2 by Ti is presented and its effect on Fermi level depinning and contact resistivity reduction to Si is experimentally studied. A low effective barrier height of 0.15 V was measured with a Ti/10 Å TiO2−x/n-Si MIS device, indicating 55% reduction compared to a metal/n-Si control contact. Ultra-low contact resistivity of 9.1 × 10−9 Ω-cm2 was obtained using Ti/10 Å TiO2−x/n+ Si, which is a dramatic 13X reduction from conventional unannealed contacts on heavily doped Si. Transport through the MIS device incorporating the effect of barrier height reduction and insulator conductivity as a function of insulator thickness is comprehensively analyzed and correlated with change in contact resistivity. Low effective barrier height, high substrate doping, and high conductivity interfacial layer are identified as key requirements to obtain low contact resistivity using MIS contacts.
In-situ phosphorus doped silicon epitaxial film with 2.8 X 10 21 cm -3 doping level is found to show high tensile stress comparable to carbon doped silicon with 1.8% substitutional carbon. As-grown samples show electrically activated dopant concentration of less than 2 X 10 20 cm -3 . The high tensile and low activation could be well explained by formation of a pseudocubic Si 3 P 4 structure in silicon lattice. Film resistivity of 0.29 mOhm-cm could be obtained with 0.25 ms annealing at 1200°C, with slight reduction in tensile strain. Also, 0.23 mOhm-cm could be obtained by millisecond anneal at 1300°C, but with 30% reduction in tensile strain.
For the first time, high performance Ge nMOSFET is fabricated using laser annealing of ion-implanted antimony (Sb) dopants which provides donor activation beyond 1x10 20 cm -3 in germanium. Record I on /I off > 10 5 is demonstrated for n + /p junctions combined with significant reduction of contact resistance to 7x10 -7 Ω-cm 2 . Performance projections for ITRS HP 22nm technology node are also discussed.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.