In-situ phosphorus doped silicon epitaxial film with 2.8 X 10 21 cm -3 doping level is found to show high tensile stress comparable to carbon doped silicon with 1.8% substitutional carbon. As-grown samples show electrically activated dopant concentration of less than 2 X 10 20 cm -3 . The high tensile and low activation could be well explained by formation of a pseudocubic Si 3 P 4 structure in silicon lattice. Film resistivity of 0.29 mOhm-cm could be obtained with 0.25 ms annealing at 1200°C, with slight reduction in tensile strain. Also, 0.23 mOhm-cm could be obtained by millisecond anneal at 1300°C, but with 30% reduction in tensile strain.
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