Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift (>7.1 V) in threshold voltage, something frequently attributed to the trapping of photoinduced hole carriers. This work demonstrates that the deterioration of threshold voltage by NBIS can be strongly suppressed by high-pressure annealing under 10 atm O2 ambient. This improvement occurred through a reduction in oxygen vacancy defects in the IGZO film, indicating that a photoinduced transition from VO to VO2+ was responsible for the NBIS-induced instability.
We demonstrate a high-performance selection device by utilizing the concept of crested oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO(x)/TiO(2)/TaO(x) structure, high current density over 10(7) A cm(-2) and excellent nonlinear characteristics up to 10(4) were successfully demonstrated. On the basis of the defect chemistry and SIMS depth profile result, we found that some Ta atoms gradually diffused into TiO(2) film, and consequently, the energy band of the TiO(2) film was symmetrically bent at the top and bottom TaO(x)/TiO(2) interfaces and modified as a crested oxide barrier. Furthermore, the one selector-one resistor device exhibited significant suppression of the leakage current, indicating excellent selector characteristics.
Organellar proteins are sorted by cargo receptors on the way to their final destination. However, receptors for proteins that are destined for the protein storage vacuole (PSV) are largely unknown. In this study, we investigated the biological role that Arabidopsis thaliana receptor homology region transmembrane domain ring H2 motif protein (AtRMR) 1 plays in protein trafficking to the PSV. AtRMR1 mainly colocalized to the prevacuolar compartment of the PSV, but a minor portion also localized to the Golgi complex. The coexpression of AtRMR1 mutants that were localized to the Golgi complex strongly inhibited the trafficking of phaseolin to the PSV and caused accumulation of phaseolin in the Golgi complex or its secretion. Coimmunoprecipitation and in vitro binding assays revealed that the lumenal domain of AtRMR1 interacts with the COOH-terminal sorting signal of phaseolin at acidic pH. Furthermore, phaseolin colocalized with AtRMR1 on its way to the PSV. Based on these results, we propose that AtRMR1 functions as the sorting receptor of phaseolin for its trafficking to the PSV.
The transition metal oxide, NbO2, which exhibits an insulator to metal transition (IMT) is regarded as a promising selector device to be integrated with a resistive memory for cross point array application. In this study, we comprehensively investigated the scaling of an NbO2 selector using a mushroom device structure. A thorough understanding of the scaling behavior of forming voltage (Vf), threshold voltage (Vth), and current (Ith) is essential to evaluate the potential of voltage as well as current scaling and selectivity of NbO2 selector. Importantly, by analyzing the scaling trend of threshold current, we believed that the IMT behavior is strongly affected by filamentary conducting path formed during the forming process. The findings provide the promise to maximize the selector device performance by minimizing the conducting path inside the NbO2 layer.
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