Diode-less nano-scale ZrO&lt;inf&gt;x&lt;/inf&gt;/HfO&lt;inf&gt;x&lt;/inf&gt; RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications

Lee, Joonmyoung; Shin, Jungho; Lee, Daeseok; Lee, Wootae; Jung, Seung Min; Jo, Minseok; Park, Jubong; Biju, K.; Kim, Seonghyun; Park, Sangsu; Hwang, Hyunsang

doi:10.1109/iedm.2010.5703393

Cited by 60 publications

(49 citation statements)

References 5 publications

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“…Similar LFN behavior that shows a slope index change was also observed in other resistive switching memory devices [20,21,30]. Fig.…”

supporting

confidence: 61%

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Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

Jeyasingh

et al. 2012

Phys. Rev. B

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-Low frequency noise measurements were performed on HfO 2 based bipolar resistive switching memory devices. A 1/f α DC noise power spectral density was observed with α~1 for low resistance state and α~2 for high resistance state. We developed an electron tunneling model to elucidate the conduction process which showed that the 1/f α behavior was due to the distribution of relaxation times of electron tunneling between the electrodes and the traps in the conducting filaments. The transition of the slope index α from 1 to 2 at a certain cutoff frequency indicates that there is a tunneling gap formed between electrodes and the residual of the conductive filaments in the high resistance state.Keywords -low frequency noise, resistive switching (RRAM), transition metal oxide, electron tunneling Currently, transition metal oxide based resistive switching memory is extensively studied as one of the most competitive candidates for future non-volatile memory applications due to its simple structure, fast switching speed, great scalability, and compatibility with silicon complementary metal-oxidesemiconductor (CMOS) technology [9][10][11]. The mechanism of resistive switching phenomenon in oxides is usually attributed to the formation/rupture of conductive filaments (CFs) which may consist of oxygen vacancies or metal precipitates [12]. The set process from high resistance state (HRS) to low resistance state (LRS) is interpreted as a dielectric soft breakdown associated with the migration of oxygen ions toward the anode, leaving behind the oxygen vacancies in the bulk oxide to form CFs connecting both electrodes [13]. To reset from LRS to HRS, there are two modes: in the unipolar reset (the reset occurs at the same polarity as the set), Joule-heating-assisted diffusion of oxygen ions from anode and surrounding oxides rupture the CFs by recombination with oxygen vacancies or re-oxidization of the metal precipitates [14]. In the bipolar reset (the reset occurs at the opposite polarity as the set), electric-field-assisted drift of oxygen ions from the oxygen reservoir rupture the CFs [15]. In the bipolar switching mode, oxidizable electrode materials such as Ti, TiN, TaN are usually used to serve as the oxygen reservoir providing the oxygen ions during the reset process [16]. The device used in this paper exhibits the bipolar switching mode. Although such a phenomenological physical switching picture above has been proposed, the detailed characterization and quantitative theoretical analysis of the conduction mechanism is still lacking in the literature.Low frequency noise (LFN) measurement is a technique that can electrically characterize the trapassisted conduction process in dielectrics [17][18][19] NiO [22] (in this paper f refers to the frequency). In this work, we perform LFN measurement on HfO 2 based resistive switching memory to investigate its conduction and switching mechanism. HfO 2 is chosen because HfO 2 based devices exhibit desirable properties such as ultra-fast switching speed (

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“…Similar LFN behavior that shows a slope index change was also observed in other resistive switching memory devices [20,21,30]. Fig.…”

supporting

confidence: 61%

“…Also from Fig. 2 (a), it is seen that for LRS the slope index α is close to 1, while for HRS there is a cutoff frequency above which α changes from 1 to 2.Similar LFN behavior that shows a slope index change was also observed in other resistive switching 4 memory devices [20,21,30]. Fig.…”

supporting

confidence: 57%

Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

Jeyasingh

et al. 2012

Phys. Rev. B

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“…Our unified Redox model has been accepted and utilized in many studies [27,28]. In the bipolar switching, the assistance of the Joule heating accelerates the switching cooperatively to the electric field.…”

Section: Operation Mechanism and Technical Assessmentmentioning

confidence: 99%

ReRAM technology; challenges and prospects

Akinaga

Shima

2012

IEICE Electron. Express

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Abstract:We review recent progresses in Resistive Random Access Memory (ReRAM) technologies together with difficult challenges and prospects. ReRAM is one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, a brief historical overview of the research is provided. The technological overview is reported with the epoch-making achievements. Second, the current understanding in terms of the operation mechanism is shown followed by the technical assessment, especially the advantages of ReRAM. Finally, we summarize the challenges facing the ReRAM technology and the prospects. Keywords: nonvolatile memories, resistance switching, functional oxides, electrochemical devices, redox reaction Classification: Electron devices, circuits, and systems References

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“…Since a pulse of more than 10 ns is needed for switching a memristor from HRS to LRS or reversely [5], the voltage disturbances induced by heavy ions will not affect the state of memristors. Similar recovery mechanism applies when the rSRAM cell stores 0.…”

Section: Design Of Rsram Memory Cellmentioning

confidence: 99%

“…We here take the write-1 operation as an example. Firstly, its word line WL and In this paper, we take V set = 2 v, V reset = −1.6 v, T set = 31 ns, T reset = 43 ns and V dd = 1.2 v as in [5].…”

Section: Operation Schemementioning

confidence: 99%

A novel memristor-based rSRAM structure for multiple-bit upsets immunity

Wang

Zhang

Chen

et al. 2012

IEICE Electron. Express

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A radiation hardened resistive SRAM structure (rSRAM) is proposed for the SRAM-based FPGAs in this paper. The rSRAM extends the conventional 6T SRAM structure by connecting memristors between the information nodes and drains of the transistors which compose cross-coupled invertors. With memristors connected to drains of OFF transistors configured to high resistance state while others configured to low resistance state forming stable voltage dividing path, the rSRAM structure is immune to both multiple-node upsets and multiplebit upsets (MBUs). The simulation result demonstrates that rSRAM cell can tolerate simultaneous disruptions affecting all sensitive nodes with an LET (Liner Energy Transfer) of 100 Mev-cm 2 /mg.

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Diode-less nano-scale ZrO<inf>x</inf>/HfO<inf>x</inf> RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications

Cited by 60 publications

References 5 publications

Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2

ReRAM technology; challenges and prospects

A novel memristor-based rSRAM structure for multiple-bit upsets immunity

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