ReRAM technology; challenges and prospects

Akinaga, H.; Shima, Hisashi

doi:10.1587/elex.9.795

Cited by 33 publications

(31 citation statements)

References 22 publications

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“…Nowadays, the NVM market is dominated by the silicon-based Flash. However, there are a few drawbacks for Flash, including scaling M A N U S C R I P T A C C E P T E D ACCEPTED MANUSCRIPT issue, relatively slow operation speed, and high voltage for program/erase operations [2]. Even though the three-dimensional crossbar structure may solve the low-density issue of Flash temporarily [3], the market demands next-generation NVM that has overall advantages over Flash.…”

Section: Introductionmentioning

confidence: 99%

“…The academic and industrial research topics on RRAM cover quite a wide range: materials problem, RS mechanism, manufacture, integration, and even other function beyond the data storage, as reviewed previously [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In this review article, we concentrate on the materials science issue including the material selection and the corresponding RS mechanisms.…”

Section: Introductionmentioning

confidence: 99%

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An overview of materials issues in resistive random access memory

Zhu

Zhou

Guo

et al. 2015

Journal of Materiomics

120

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Resistive random access memory (RRAM) is a very promising next generation non-volatile RAM, with quite significant advantages over the widely used silicon-based Flash memories. For RRAM, material with switchable resistance, working as the storage medium, is the most important part for the performance of the memory. In this review, as a start, some general hints for the materials selection are proposed. Then most recent studies on this emerging memory from the perspective of materials science are summarized: various materials with resistance switch (RS) behavior and the underlying mechanisms are introduced; as a complementary to the previous review articles, here the increasingly important role of computational materials science in the research of RRAM is presented and highlighted. By incorporating the framework of high-throughput calculation and multi-scale simulations, design process of new RRAM could be accelerated and more cost-effective.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An overview of materials issues in resistive random access memory

Zhu

Zhou

Guo

et al. 2015

Journal of Materiomics

120

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“…It was reported that the redox reaction at Pt/NiO interface contributes to the ReRAM switching 45 as reported in other materials. 38,39 After realization of in-situ forming-reset-set processes, composition analysis within filaments, especially at the vicinity of the Pt/NiO interface, will make clear information on the switching mechanism. Although the forming process was clearly recognized, the reset operation was not found in the TEM instrument where the ambient is a vacuum.…”

Section: Discussionmentioning

confidence: 99%

“…On the other hand, binary oxides showing the unipolar as well as bipolar switching generally need the forming process while the ReRAM device with very thin oxide layer occasionally does not need this process. 38,39 The devices are easily eternally broken during the forming process where a high level of electricity is used, and the in-situ TEM observation is thought to be hard as pointed out by Schroeder et al 40 In a work on Ti-O by Kwon et al, 41 they observed a phase transformation in a filament during the set and reset operation. It was pointed out this phase transformation between the conductive Magneli phase and other insulating phase contributes to the ReRAM switching.…”

Section: Introductionmentioning

confidence: 99%

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

Fujii

Arita

Hamada

et al. 2013

Journal of Applied Physics

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We used thermal oxidization at various temperatures to prepare NiO/Pr-Ir for use in resistance random access memory (ReRAM) samples. In-situ transmission electron microscopy (TEM) was used to investigate the forming process of these ReRAM samples, where a needle-shaped top electrode of Pt-Ir was attached to the NiO/Pt-Ir ReRAM layer. The forming voltage initializing the NiO layer increased at an oxidization temperature of between 200 and 400 C. In this process, conductive bridges, which are thought to be conductive filaments of a ReRAM, appeared, and their sizes showed a correlation with the injection power. It was as small as about 300 nm 2 when the injection power was 10 À6 W. Energy dispersive X-ray spectroscopy was used to analyze the bridge, and it was experimentally confirmed that the oxygen content of the bridge was lower than that of the initial NiO layer. However, these bridges in the low resistance state did not show further ReRAM switching to the high resistance state inside of a TEM instrument. To check the reason of this result, we investigated samples outside of the TEM instrument, which had similar geometry to that of TEM specimens. They showed the ReRAM switching in air ambient but not in vacuum. Combining these results inside and outside of the TEM instrument, it can be concluded that the existence of oxygen around the conductive filament plays an important role. This supports the filament redox model on the ReRAM operation. V C 2013 American Institute of Physics.

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“…Non-volatile memories have become a key technology to realize the advanced electronic devices especially for the portable electronics applications [1,2,3]. Further scaling and integration of non-volatile memories would be required such as 4 tera bits for multi-level cell (MLC) and 8 tera bits for triple-level cell (TLC) with 22 nm technology node in 2028 [4].…”

Section: Introductionmentioning

confidence: 99%

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

Ohmi

Liu

2015

IEICE Electron. Express

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Fully in-situ formation of Hf-based metal-oxide-nitride-oxidesilicon (MONOS) structures utilizing electron-cyclotron-resonance (ECR) plasma sputtering was investigated for the first time. It was found that the MONOS structures with in-situ formed HfN 0.5 gate electrode showed faster programing, high injection efficiency and larger flat-band voltage (V FB ) shift of 2.5 V compared to the MONOS structure with ex-situ formed Al gate electrode under programing voltage of 10 V. The retention characteristics of MONOS structure with in-situ formed HfN 0.5 gate electrode were also superior to the MONOS structure with ex-situ formed Al gate electrode. The degradation of retention for V FB shift after 60 min of programing was 40% for the MONOS structure with ex-situ formed Al gate electrode, while it was 16% for the MONOS structure with in-situ formed HfN gate electrode.

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ReRAM technology; challenges and prospects

Cited by 33 publications

References 22 publications

An overview of materials issues in resistive random access memory

An overview of materials issues in resistive random access memory

In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

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