Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition

Marcos, G.; Rhallabi, A.; Ranson, P.

doi:10.1016/j.apsusc.2007.11.051

Cited by 11 publications

(4 citation statements)

References 24 publications

(29 reference statements)

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“…Consistent with the established literature values, 20,22,43 the ion incident angle dependency of the silicon etch yield Y Si was assumed to have the form f ða in Þ Si ¼ f60 : 85 g and was kept unchanged in the all simulations.…”

Section: -4mentioning

confidence: 99%

“…Feature scale simulations of SF 6 =O 2 cryogenic silicon etching have been previously addressed by several groups [18][19][20][21][22][23][24][31][32][33] for etching of features predominantly in the micron scale. The model developed by Marcos et al 18 was based on Monte Carlo techniques and considered the effects of species distributions, chemical etching, preferential sputtering, etched species redeposition, and the passivation mechanisms.…”

Section: Simulation Model Developmentmentioning

confidence: 99%

“…[18][19][20][21][22][23][24] Here, we develop a semi-empirical model of cryogenic SF 6 =O 2 etching of silicon that provides significant insight into the profile development as a function of plasma surface chemistry and feature sizes. The model is embedded into ViPER (Virtual Plasma Etch Reactor), which is a plasma etching profile simulation software.…”

mentioning

confidence: 99%

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Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Ishchuk

Olynick

Liu

et al. 2015

Journal of Applied Physics

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Cryogenic etching of silicon is a route to high aspect ratio silicon features with high mask selectivity and smooth sidewalls. These benefits have been realized even down to 10 nm half-pitch features. In this work, we develop a semi-empirical simulation model to understand mechanisms responsible for nanoscale profile evolution during plasma etching of silicon in SF6/O2 chemistry at cryogenic temperatures. The model parameters are first calibrated to the etching equipment using features from 500 nm to 2 μm. Using the calibrated model, we show the experimental finding that smaller features need more oxygen to achieve vertical anisotropic profiles. This is a consequence of two related effects: (1) the SiOxFy passivation layer sputtering yield is strongly dependent on the oxygen content at the feature sidewalls and (2) Knudsen transport within small features or higher aspect ratios depletes oxygen faster than fluorine due to the higher sticking coefficient of oxygen. The simulation was applied to 25 nm half-pitch features with excellent results.

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Section: -4mentioning

confidence: 99%

Section: Simulation Model Developmentmentioning

confidence: 99%

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Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Ishchuk

Olynick

Liu

et al. 2015

Journal of Applied Physics

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“…It is not easy to combine our neutral kinetic Monte-Carlo approach with linear cascade regime. Nevertheless, a semi-empirical expression giving the sputtering yield versus the ion energy is used [39]:…”

Section: Ion Inp Sputtering Modelmentioning

confidence: 99%

Atomic scale study of InP etching by Cl₂-Ar ICP plasma discharge

Rhallabi

Chanson

Landesman

et al. 2011

Eur. Phys. J. Appl. Phys.

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A gas phase kinetic model combined to a 3D atomic etching model have been developed to study the etching process of InP under Cl 2 -Ar ICP plasma discharge. A gas phase global kinetic model is used to calculate the reactive particle fluxes implied in the etching mechanisms. The 3D atomic InP etching model is based on the Monte-Carlo kinetic approach where the plasma surface interactions are described in the probability way. The coupling between the plasma chemistry model and the surface etching model is an interesting approach to predict the etched surface properties in term of the etch rate, the surface roughness and surface steochiometry as a function of the operating conditions.A satisfactory agreement is obtained by comparing the experimental and the simulation results concerning the evolution of the main plasma discharge parameters such as the electron density and temperature versus the ICP source power for surface recombination coefficient of atomic chlorine fixed at γ Cl =0.04. On the other hand, simulation results show the effect of the operating conditions on the etched surface roughness and the etch rate evolutions with time in the early stage. Moreover, the simulation results show the correlation between the decrease of the ion to chlorine flux ratio and the decrease of the RRMS as a function of the pressure.

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Modeling of plasma density, argon ion energy and ion velocity functions in a dipolar electron cyclotron resonance plasma source

Bin

Zhang

2020

Vacuum

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Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition

Cited by 11 publications

References 24 publications

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Atomic scale study of InP etching by Cl₂-Ar ICP plasma discharge

Modeling of plasma density, argon ion energy and ion velocity functions in a dipolar electron cyclotron resonance plasma source

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Properties of deep etched trenches in silicon: Role of the angular dependence of the sputtering yield and the etched species redeposition

Cited by 11 publications

References 24 publications

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Atomic scale study of InP etching by Cl2-Ar ICP plasma discharge

Modeling of plasma density, argon ion energy and ion velocity functions in a dipolar electron cyclotron resonance plasma source

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Product

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Atomic scale study of InP etching by Cl₂-Ar ICP plasma discharge