Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Ishchuk, Valentyn; Olynick, Deirdre L.; Liu, Zuwei; Rangelow, Ivo W.

doi:10.1063/1.4927731

Cited by 27 publications

(10 citation statements)

References 54 publications

(90 reference statements)

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“…Also, (d) it can be operated under ambient conditions as well as in vacuum. It can be used in mix-and-match lithography for high-throughput, e.g., for novel electronic devices, in particular in combination with cryogenic plasma etching, offering anisotropic and high resolution, and selective pattern transfer [ 163 , 181 ]. Scanning proximal tips can be employed as mechanical, thermal, chemical and/or electric sources to initiate and perform various physical or chemical lithographic processes.…”

Section: Reviewmentioning

confidence: 99%

Charged particle single nanometre manufacturing

Prewett¹,

Hagen²,

Lenk³

et al. 2018

Beilstein J. Nanotechnol.

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Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

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Section: Reviewmentioning

confidence: 99%

Charged particle single nanometre manufacturing

Prewett¹,

Hagen²,

Lenk³

et al. 2018

Beilstein J. Nanotechnol.

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“…The cryogenic etching of silicon has been investigated by Dussert and coworkers, 128,129) and Ishchuk et al 130) However, a fundamental understanding of the cryogenic etching process with plasmas containing SF 6 =O 2 and C 4 F 8 has not yet been obtained. Specifically, the plasma behavior and its interaction with the surface to improve cryogenic etching need to be investigated.…”

Section: Ion Trajectories In High-aspect Ratio Etchingmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.

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“…This method uses low temperatures (typically below − 100°C) at which a passivating layer of SiO x F y is formed. This enables a highly anisotropic etching in the vertical direction that depends on the SF 6 :O 2 ratio and the temperature 46 . This is of high interest for the fabrication of masters for HAR nanostructures, including the PNF with its nanoridges along with micro-sized multimode waveguides.…”

Section: Silicon-based Masters and Mouldsmentioning

confidence: 99%

High-aspect-ratio nanoimprint process chains

et al. 2017

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Different methods capable of developing complex structures and building elements with high-aspect-ratio nanostructures combined with microstructures, which are of interest in nanophotonics, are presented. As originals for subsequent replication steps, two families of masters were developed: (i) 3.2 μm deep, 180 nm wide trenches were fabricated by silicon cryo-etching and (ii) 9.8 μm high, 350 nm wide ridges were fabricated using 2-photon polymerization direct laser writing. Both emerging technologies enable the vertical smooth sidewalls needed for a successful imprint into thin layers of polymers with aspect ratios exceeding 15. Nanoridges with high aspect ratios of up to 28 and no residual layer were produced in Ormocers using the micromoulding into capillaries (MIMIC) process with subsequent ultraviolet-curing. This work presents and balances the different fabrication routes and the subsequent generation of working tools from masters with inverted tones and the combination of hard and soft materials. This provides these techniques with a proof of concept for their compatibility with high volume manufacturing of complex micro-and nanostructures.Keywords: cryo-etching; direct 6 write laser lithography; high aspect ratio; moulding; nanoimprint lithography; Ormocer; photonic nanofences; 2-photon polymerization INTRODUCTION High-aspect-ratio microstructures (HARMS), that is, structures with a large height/width ratio, have found many applications 1,2 such as X-ray gratings 3 , gas chromatography columns 4 , magnetic coils 5 , X-ray telescopes 6 , micro-gears 7 , micro-capacitors with highaspect-ratio (HAR) cantilevers 8 , and micromechanical and microoptical elements 9,10 . These structures exhibit aspect ratios (ARs) of over 10 and almost vertical sidewalls, making them much more challenging to develop than the structures typically used in planar technology with moderate ARs of 1 to 2. They are therefore characterized by an intermediate state between two-and threedimensional (2D and 3D), that is, a 2D planar design that is extended into the vertical dimension and often called . There are several methods to produce HAR structures on typical planar substrates, most of them relying on the anisotropy of subtractive pattern transfer of a low AR masking layer into an underlying resist or substrate, that is, by using mask based ultraviolet (UV)-photolithography (PL) with an AR up to 5, silicon etching (for example, dry etching) with an AR up to 20, and direct write laser lithography (DWL) and X-ray lithography with ARs 420 (Refs. 12-15). These methods are continually being improved to produce a higher AR and smaller lateral dimensions. Furthermore, they are enlarged by new techniques that are often subsets of etching processes with different advantages and disadvantages. One of those challenges is the suitability for submicron and nanopatterning, that is, structures with lateral sizes much smaller than 1 μm and the possibility to combine micro-with nanostructures in the same material.There are three main approaches: (1)...

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Profile simulation model for sub-50 nm cryogenic etching of silicon using SF6/O2 inductively coupled plasma

Cited by 27 publications

References 54 publications

Charged particle single nanometre manufacturing

Charged particle single nanometre manufacturing

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

High-aspect-ratio nanoimprint process chains

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