Articles you may be interested inSurface chemistry of InP ridge structures etched in Cl2-based plasma analyzed with angular XPS J. Vac. Sci. Technol. A 33, 05E124 (2015); 10.1116/1.4927541Effect of Cl2-and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy
The micro-capillary condensation of a new high boiling point organic reagent (HBPO), is studied in a periodic mesoporous oxide (PMO) with ∼34 % porosity and k-value ∼2.3. At a partial pressure of 3 mT, the onset of micro-capillary condensation occurs around +20 °C and the low-k matrix is filled at −20 °C. The condensed phase shows high stability from −50 < T ≤−35 °C, and persists in the pores when the low-k is exposed to a SF6-based plasma discharge. The etching properties of a SF6-based 150W-biased plasma discharge, using as additive this new HBPO gas, shows that negligible damage can be achieved at −50 °C, with acceptable etch rates. The evolution of the damage depth as a function of time was studied without bias and indicates that Si-CH3 loss occurs principally through Si-C dissociation by VUV photons.
International audienceRidge waveguides fabricated by inductively coupled plasma (ICP) etching using chlorine-based gases were studied by spectrum image cathodoluminescence (CL). Structures with different dimensions (height and width) were studied, evidencing the generation of defects during ICP processing. Using the CL spectrum images, the distribution of the stresses induced by the defects was mapped. The residual stresses depend on the dimensions of the waveguides. Using finite-element analysis the strain distribution was reproduced. The initial strain conditions provided a picture of the distribution of the defects generated by the etching process, showing differences between the etched floor, the side-walls of the waveguides, and the unetched top surface. The possible mechanisms for defect formation, as well as the possible identity of the defects, are discussed
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