Modeling of plasma density, argon ion energy and ion velocity functions in a dipolar electron cyclotron resonance plasma source

Bin, Zhang; Zhang, Xiaobing

doi:10.1016/j.vacuum.2020.109215

“…The authors reported results obtained with electron densities below and above the cut-off value of n c = 7.4 × 10 16 m −3 and the resultant changing damping of microwave propagation. Further ECR discharges in hydrogen [24] and argon [25] with electron densities lower than n c were investigated by a fluid and hybrid model, respectively. The weak microwave damping enabled observations of the typical ECR behavior in these studies.…”

Section: Introductionmentioning

confidence: 99%

Verified modeling of a low pressure hydrogen plasma generated by electron cyclotron resonance

Sigeneger

¹

,

Ellis

²

,

Harhausen

³

et al. 2022

Plasma Sources Sci. Technol.

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A self-consistent fluid model has been successfully developed and employed to model an electron cyclotron resonance driven hydrogen plasma at low pressure. This model has enabled key insights to be made on the mutual interaction of microwave propagation, power density, plasma generation, and species transport at conditions where the critical plasma density is exceeded. The model has been verified by two experimental methods. Good agreement with the ion current density and floating potential - as measured by a retarding energy field analyzer - and excellent agreement with the atomic hydrogen density - as measured by two-photon absorption laser induced fluorescence - enables a high level of confidence in the validity of the simulation.

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“…Simulations attract ever-increasing attention as tools for examining the behavior of plasma and optimizing the plasma etching processes. Models of inductively coupled plasma chambers for RIE setups with high-frequency (HF) bias voltage applied to the lower electrode with a substrate installed on it have already been developed and tested [8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Influence of the asymmetry of the metal mask arrangement on the matching of the lower electrode with a high-frequency displacement generator during reactive-ion etching of massive substrates

Poletayev

¹

,

Lyubimov²

2022

Semiconductors

0

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The effect of the degree of asymmetry in the arrangement of metal masks on the matching of the lower electrode with a high-frequency displacement generator during selective reactive-ion etching of massive substrates in plasma-forming gas mixtures based on freon-14 is studied theoretically and experimentally. Theoretically, the absence of the influence of the asymmetry of the mask location on the specific reactive power is shown. It is shown that at the edge of the substrate, especially with a mask, there is a sharp increase in the RF current density, which proves mainly the surface (end) nature of its flow. The influence of the mask location on the behavior of the electric charge density, which correlates with the distribution of the RF current density in the near-surface layer of the substrate, is established. No redistribution of the charge density of the chemically active plasma particles at the edge of the mask was detected. In accordance with the theoretical results obtained, it is experimentally shown that metal masks with a side length ratio of 36/0 mm reduce the power reflection coefficient within 5%. Keywords: diffractive optical element, reactive ion etching, inductively coupled plasma, contact mask, lower electrode, simulation Multiphysics.

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“…Для понимания поведения плазмы и оптимизации плазменных процессов травления все больший интерес представляет моделирование. В настоящее время разработаны и апробированы модели индуктивно связанных плазменных камер с приложенным высокочастотным (ВЧ) напряжением смещения на нижний электрод с установленной подложкой [8][9][10][11], применяемых в установках РИТ.…”

Section: Introductionunclassified

Влияние Асимметрии Расположения Металлических Масок На Согласование Нижнего Электрода С Высокочастотным Генератором Смещения При Реактивно-Ионном Травлении Массивных Подложек

Полетаев¹,

Любимов²

2021

Физика И Техника Полупроводников

0

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The effect of the degree of asymmetry in the arrangement of metal masks on the matching of the lower electrode with a high-frequency displacement generator during selective reactive-ion etching of massive substrates in plasma-forming gas mixtures based on freon-14 is studied theoretically and experimentally. Theoretically, the absence of the influence of the asymmetry of the mask location on the specific reactive power is shown. It is shown that at the edge of the substrate, especially with a mask, there is a sharp increase in the RF current density, which proves mainly the surface (end) nature of its flow. The influence of the mask location on the behavior of the electric charge density, which correlates with the distribution of the RF current density in the near-surface layer of the substrate, is established. No redistribution of the charge density of the chemically active plasma particles at the edge of the mask was detected. In accordance with the theoretical results obtained, it is experimentally shown that metal masks with a side length ratio of 36/0 mm reduce the power reflection coefficient within 5%.

show abstract

Modeling of plasma density, argon ion energy and ion velocity functions in a dipolar electron cyclotron resonance plasma source

Cited by 5 publications

References 46 publications

Verified modeling of a low pressure hydrogen plasma generated by electron cyclotron resonance

Verified modeling of a low pressure hydrogen plasma generated by electron cyclotron resonance

Influence of the asymmetry of the metal mask arrangement on the matching of the lower electrode with a high-frequency displacement generator during reactive-ion etching of massive substrates

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