2006
DOI: 10.1016/j.matlet.2005.12.055
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Properties of Al-doped ZnO thin film sputtered from powder compacted target

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Cited by 43 publications
(16 citation statements)
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“…This result is in agreement with earlier report [26]. The preferred orientation is due to the lowest surface free energy for (0 0 2) plane [27][28][29]. In addition to the fact that intensity increases, we also observe that the (0 0 2) and (0 0 4) peak positions show a shift (inset Fig.…”
Section: Resultssupporting
confidence: 93%
“…This result is in agreement with earlier report [26]. The preferred orientation is due to the lowest surface free energy for (0 0 2) plane [27][28][29]. In addition to the fact that intensity increases, we also observe that the (0 0 2) and (0 0 4) peak positions show a shift (inset Fig.…”
Section: Resultssupporting
confidence: 93%
“…Conductivity increases from 2.12 Â 10 À 3 to 2.35 Â 10 À 3 S/cm with an increase in the Al concentration from 0.5 to 1.0 at%, and then drops to 2.06 Â 10 À 3 S/cm at 2.0 at%. Such trends are not unusual and are frequently interpreted as a neutralization of the dopant atom [17,[27][28][29][30]33]. The annealing temperature has a much stronger influence on the conductivity due to recrystallization of the films.…”
Section: Characterization Of Zno Tio X and Azomentioning
confidence: 97%
“…It is well-known that AZO thin films are highly textured with the c-axis perpendicular to the substrate surface, especially in the (0 0 2) orientation. This (0 0 2) preferred orientation is due to the minimal surface energy, which the hexagonal structure (c-plane to the ZnO crystallites) corresponds to the densest packed plane [28][29][30]. If Al 3 þ ions only substitute Zn 2 þ ions, the lattice parameter of AZO crystals decreases and the (0 0 2) peak shifts to higher 2y value due to the smaller radius of Al 3 þ ions (0.53Å) compared to Zn 2 þ ions (0.75Å) [28].…”
Section: Characterization Of Zno Tio X and Azomentioning
confidence: 99%
“…Multilayer films were prepared by DC magnetron sputtering on glass substrates without heating of glass. The glass substrates were cleaned by ultrasonic cleaner for 1 h in acetone, ethanol and distilled water, respectively [10]. The sputtering chamber was pumped down below than 5.0 Â 10 À5 torr and the sputtering processes were performed at Ar pressure of 5.0 Â 10 À3 torr.…”
Section: Film Preparationmentioning
confidence: 99%