We report the successful growth of quaternary Cu2ZnSnSe4 (CZTSe) thin films by pulsed laser deposition (PLD) using Nd:YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite‐type structure even at room temperature. All CZTSe films showed a p‐type electrical conductivity with a high absorption coefficient of 104–105 cm–1, a bandgap of 1.5 eV and a carrier concentration of the order of 1017–1018 cm–3. These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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High-quality Ga2O3 films are obtained by spray pyrolysis from aqueous solutions through optimization of the solution composition and the spraying process parameters.