Nanocrystalline Ga<sub>2</sub>O<sub>3</sub> films deposited by spray pyrolysis from water-based solutions on glass and TCO substrates

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“…[53] ) and the metal oxide oxygen peak binding energy (~531 eV) in monoclinic β-Ga2O3 (e.g. [54,55] ),…”

Section: From Ga2o3/znga2o4 Mixed Phases To Monophase Znga2o4mentioning

confidence: 99%

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

Chikoidze

Sartel

Madaci

et al. 2020

Crystal Growth & Design

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“…Minh-Tan Ha, Kyoung-Ho Kim, Yun-Ji Shin, Seong-Min Jeong, and Si-Young Bae* DOI: 10.1002/admi.202001895 vapor phase epitaxy has been used to grow the metastable αand ε-Ga 2 O 3 phases at a high rate, [14] and sol-gel routes (e.g., spin coating and spray pyrolysis) have been employed to deposit β-Ga 2 O 3 thin films. [15][16][17][18] Mist chemical vapor deposition (mist CVD) is considered to be a combination of the CVD and sol-gel approaches. Mist CVD is preferred to other methods due to its facile, cost-effective (atmospheric pressure, single-step operation), and environmentally friendly characteristics (non-toxic precursors).…”

Section: Leidenfrost Motion Of Water Microdroplets On Surface Substramentioning

confidence: 99%

Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition

Kim

Shin

et al. 2021

Adv Materials Inter

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It is hypothesized that gravity‐driven sedimentation and gliding of water microdroplets on a substrate surface due to the Leidenfrost effect explain the deposition behaviors of epilayers via mist chemical vapor deposition (mist CVD). The deposition rate, thickness uniformity, and surface morphology are dependent on the velocity, incident angle, incident probability, gliding distance, and the lifetime of the droplets on the surface of the substrate. Practically, the deposition of corundum structured gallium oxide (α‐Ga2O3) epilayers on a tilted 2‐inch c‐plane sapphire substrate validated the hypothesis. A high substrate tilt angle and a low mist stream velocity are favorable for a high deposition rate. In contrast, a low substrate tilt angle and a high mist stream velocity are suitable for high uniformity and stable deposition of the α‐Ga2O3 thin films via mist CVD.

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“…XPS was conducted to determine the chemical composition of the sample (before and after annealing) as well as the homogeneity of chemical composition. In metallic form, Ga 2p transitions occur at 1116 and 1143 eV, whereas in Ga 2 O 3 , peaks are observed at 1118 and 1145 eV . The 3d transition appears at a binding energy of 17.8 eV for elemental Ga and 20.1 eV for Ga 2 O 3 .…”

Section: Resultsmentioning

confidence: 98%

Synthesis and Characterization of Large‐Area Nanometer‐Thin β‐Ga₂O₃ Films from Oxide Printing of Liquid Metal Gallium

Cooke

Ghadbeigi

Sun

et al. 2020

Physica Status Solidi (a)

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Herein, wafer‐scale Ga2O3 films are shown, which are synthesized by oxide printing of liquid metal Ga on SiO2/Si and sapphire substrates. This process enables highly uniform ≈2 nm‐thick films over ≫1 mm2 areas. The physical properties of these films (as‐deposited and after annealing in ambient conditions) are investigated. X‐ray photoelectron spectroscopy indicates that the as‐prepared films contain significant fractions (up to 8% wt) of Ga metal residue, which completely converts to Ga2O3 after annealing. Results from Raman spectroscopy confirm the presence of β‐phase in annealed samples. Transmission electron microscopy images indicate that the films are composed of polycrystalline domains. Photoluminescence is observed in all samples, depicting the typical spectrum of Ga2O3 with four emission bands. After annealing, the luminescence intensity increases across all samples, which is attributed to an enhancement in crystallinity. Also, the relative intensity of the blue emission decreases after annealing, which is consistent with a transition from bluish to greenish color in the films. This observation is associated with a change in defect population upon annealing. Overall, these results demonstrate that oxide printing of liquid metal gallium is a simple process that, upon annealing of the resulting films, leads to nanometer‐thin β‐Ga2O3 films over wafer‐scale areas.

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Nanocrystalline Ga₂O₃ films deposited by spray pyrolysis from water-based solutions on glass and TCO substrates

Abstract: High-quality Ga2O3 films are obtained by spray pyrolysis from aqueous solutions through optimization of the solution composition and the spraying process parameters.

Cited by 48 publications

References 40 publications

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition

Synthesis and Characterization of Large‐Area Nanometer‐Thin β‐Ga₂O₃ Films from Oxide Printing of Liquid Metal Gallium

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Nanocrystalline Ga2O3 films deposited by spray pyrolysis from water-based solutions on glass and TCO substrates

Abstract: High-quality Ga2O3 films are obtained by spray pyrolysis from aqueous solutions through optimization of the solution composition and the spraying process parameters.

Cited by 48 publications

References 40 publications

p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition

Synthesis and Characterization of Large‐Area Nanometer‐Thin β‐Ga2O3 Films from Oxide Printing of Liquid Metal Gallium

Contact Info

Product

Resources

About

Nanocrystalline Ga₂O₃ films deposited by spray pyrolysis from water-based solutions on glass and TCO substrates

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

p-Type Ultrawide-Band-Gap Spinel ZnGa₂O₄: New Perspectives for Energy Electronics

Synthesis and Characterization of Large‐Area Nanometer‐Thin β‐Ga₂O₃ Films from Oxide Printing of Liquid Metal Gallium