Influence of deposition temperature on structural, optical and electrical properties of sputtered Al doped ZnO thin films

Mosbah, Ahmed; Aida, M.S.

doi:10.1016/j.jallcom.2011.11.113

Cited by 72 publications

(23 citation statements)

References 44 publications

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“…In order to produce ZnO:Al, the target composition consisted of 98 wt.% zinc and 2 wt.% aluminum. The choice of 2 wt.% Al doping of ZnO was due to studies reported by other authors (Das and Ray, 2003;Mosbah and Aida, 2012;Kwak, 2004;Dao et al, 2009), regarding this composition as the best condition for a low resistivity (ρ ~ 10 −4 Ω.cm) for this type of film. Glass (25×40 mm) and (001) silicon (100 mm 2 )…”

Section: Methodsmentioning

confidence: 99%

“…Applications such as solar cells had already been reported in the 90's using zinc oxide doped with aluminum with properties superior to zinc oxide doped with indium in terms of resistivity and transparency (Harding et al, 1991;Martínez et al, 1997). Later, its chemical (Yoo et al, 2005) and thermal stability differential during processing (Mosbah and Aida, 2012) was also reported. Other features, which promote its use, are its constituents Zn and Al, which are more abundant and less toxic than the constituents of ITO (Klingshirn, 2007).…”

Section: Introductionmentioning

confidence: 99%

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Optical and Structure Analysis of ZnO:Al Film

Trindade¹,

Chaves²,

Bortoleto³

et al. 2017

American Journal of Engineering and Applied Sciences

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ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation in the plane (002) is observed in the doped samples. The Al incorporated films exhibited optical transmittance above 80% in the visible spectrum and a clear absorption band in the infrared due to free carriers. Additionally, the optical band gap around 3.48 eV is significantly above the values for the intrinsic ZnO (3.25 eV). Photoluminescence (PL) measurements showed a broad emission band in the visible region. In addition, PL emission lines at 3.32 and 3.37 eV showed up in Al incorporated films, and were related to excitonic emissions. The results show that the Burstein-Moss effect plays a central role in determining the optical characteristics of the doped material.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optical and Structure Analysis of ZnO:Al Film

Trindade¹,

Chaves²,

Bortoleto³

et al. 2017

American Journal of Engineering and Applied Sciences

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“…ZnO and AZO have been deposited by a number of routes including physical vapour deposition methods such as pulsed laser deposition (PLD) [8] and sputtering [9] and by solution based methods such as spray pyrolysis [10] and sol-gel [11]. Chemical vapour deposition (CVD) is also widely used in variations including metal organic (MO)CVD [12], low pressure (LP)CVD [13], plasma enhanced (PE)CVD [14] and aerosol-assisted (AA)CVD [15,16].…”

Section: Introductionmentioning

confidence: 99%

Aerosol assisted chemical vapour deposition of transparent conductive aluminum-doped zinc oxide thin films from a zinc triflate precursor

et al. 2016

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The use of zinc triflate (trifluoromethanesulfonate), [Zn(OTf)2] as a precursor in the aerosol assisted chemical vapour deposition of zinc oxide thin films is described. Aluminum doped zinc oxide (AZO) thin films are also shown to be deposited when aluminum acetylacetonate [Al(acac)3] was introduced into the precursor solution, illustrating the versatility of this system. Film characterization techniques include glancing angle X-ray powder diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and optical and electrical measurements. AZO films with an Al content of 7 at.% were found to have favourable transparent conducting oxide properties with simultaneous high transparency (> 80 %) in the visible light region and a low electrical resistivity (1.96 × 10 -3 Ω cm).

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“…Many techniques have been used to prepare ZnO:Ga thin films, such as magnetron sputtering, pulsed laser deposition (PLD), atomic layer deposition (ALD) [8][9][10]. Among these deposition methods, RF magnetron sputtering is used most often due to high deposition rates, process stability and reliability, and preparation of high-quality thin films on large-scale substrates [11]. In this paper, we investigated the structural, electrical, and optical properties of GZO films deposited under different RF power and discussed the RF power dependence of the resistivity of GZO thin films.…”

Section: Introductionmentioning

confidence: 99%

Properties of ZnO:Ga thin films deposited by RF magnetron sputtering under various RF power

Kim¹,

Kim²

2015

Applied Science and Convergence Technology

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ZnO:Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% Ga 2 O 3 ) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO:Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110 W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.

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Influence of deposition temperature on structural, optical and electrical properties of sputtered Al doped ZnO thin films

Cited by 72 publications

References 44 publications

Optical and Structure Analysis of ZnO:Al Film

Optical and Structure Analysis of ZnO:Al Film

Aerosol assisted chemical vapour deposition of transparent conductive aluminum-doped zinc oxide thin films from a zinc triflate precursor

Properties of ZnO:Ga thin films deposited by RF magnetron sputtering under various RF power

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