2016
DOI: 10.1016/j.tsf.2016.09.008
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Aerosol assisted chemical vapour deposition of transparent conductive aluminum-doped zinc oxide thin films from a zinc triflate precursor

Abstract: The use of zinc triflate (trifluoromethanesulfonate), [Zn(OTf)2] as a precursor in the aerosol assisted chemical vapour deposition of zinc oxide thin films is described. Aluminum doped zinc oxide (AZO) thin films are also shown to be deposited when aluminum acetylacetonate [Al(acac)3] was introduced into the precursor solution, illustrating the versatility of this system. Film characterization techniques include glancing angle X-ray powder diffraction, X-ray photoelectron spectroscopy, scanning electron micros… Show more

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Cited by 10 publications
(8 citation statements)
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“…17 Aluminiumdoped ZnO (AZO), gallium-doped ZnO (GZO), and indium-doped ZnO (IZO) thin films have been prepared by various techniques, including magnetron sputtering, [18][19][20] pulsed laser deposition (PLD), [21][22][23] molecular beam epitaxy (MBE), 24,25 atomic layer deposition (ALD), [26][27][28] spray pyrolysis, 29,30 atmospheric pressure chemical vapour deposition (APCVD), [31][32][33] and aerosol assisted chemical vapour deposition (AACVD). [34][35][36] Moreover, co-doped ZnO films have been prepared using these dopants. Co-doping allows the benefits of two dopants to be exploited simultaneously.…”
Section: Introductionmentioning
confidence: 99%
“…17 Aluminiumdoped ZnO (AZO), gallium-doped ZnO (GZO), and indium-doped ZnO (IZO) thin films have been prepared by various techniques, including magnetron sputtering, [18][19][20] pulsed laser deposition (PLD), [21][22][23] molecular beam epitaxy (MBE), 24,25 atomic layer deposition (ALD), [26][27][28] spray pyrolysis, 29,30 atmospheric pressure chemical vapour deposition (APCVD), [31][32][33] and aerosol assisted chemical vapour deposition (AACVD). [34][35][36] Moreover, co-doped ZnO films have been prepared using these dopants. Co-doping allows the benefits of two dopants to be exploited simultaneously.…”
Section: Introductionmentioning
confidence: 99%
“…However, due to the relatively high and unstable price of raw indium and tin, cheaper alternatives are highly sought after. 8 One of the main substitute TCO materials that has emerged is aluminium-doped zinc oxide (AZO), due to the inexpensive precursors, the wide band gap of ZnO ( ca. 3.37 eV at room temperature), and the n-type conductivity.…”
Section: Introductionmentioning
confidence: 99%
“…[8][9][10][11][12] Doping is a strategy to enhance the electrical conductivity of TCO materials. Cation dopants such as Al 3+ , Ga 3+ , In 3+ , [13][14][15][16][17][18][19] Sc 3+ , 20 Si 4+ (ref. 21 and 22) and Cu 23 and anion dopants such as F À , 16,24,25 Cl À (ref.…”
Section: Introductionmentioning
confidence: 99%