Power optimized SRAM cell with high radiation hardened for aerospace applications

Prasad, Govind; Mandi, Bipin Chandra; Ali, Maifuz

doi:10.1016/j.mejo.2020.104843

Cited by 39 publications

(15 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…RHPD12T [17], RSP14T [15] and RHBD14T [16]. Note that, even though SIRI comprises 14 transistors, all except P1 and P2 (2.8× larger) are minimum-sized.…”

Section: Simulation Setup and Resultsmentioning

confidence: 99%

“…RSP14T [15] is a modified version of RHD12T which shows a better SEU tolerance at the '0'-storing storage node, but still fails to recover the original state if enough charge is collected at the node. Similarly, RHBD14T [16] claims to recover from SEMNUs, but cannot recover from a '1'→'0' SEU induced at its internal node. RHM12T [9] and RHPD12T [17] are capable of recovering from SEUs of both polarities induced at any sensitive node.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Soft-Error-Immune Read-Stability-Improved SRAM for Multi-Node Upset Tolerance in Space Applications

Pal

Mohapatra

et al. 2021

IEEE Trans. Circuits Syst. I

View full text Add to dashboard Cite

“…RHPD12T [17], RSP14T [15] and RHBD14T [16]. Note that, even though SIRI comprises 14 transistors, all except P1 and P2 (2.8× larger) are minimum-sized.…”

Section: Simulation Setup and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Soft-Error-Immune Read-Stability-Improved SRAM for Multi-Node Upset Tolerance in Space Applications

Pal

Mohapatra

et al. 2021

IEEE Trans. Circuits Syst. I

View full text Add to dashboard Cite

“…Authors in [21] [74] can recover from MEUs but cannot recover from a 1→0 SEU induced at one of its nodes [76].…”

Section: ) Previous Cell Designs That Cannot Provide Seu Tolerancementioning

confidence: 99%

Nwise and Pwise: 10T Radiation Hardened SRAM Cells for Space Applications With High Reliability Requirements

2022

View full text Add to dashboard Cite

SRAM cells are widely used to design memory blocks of, e.g., caches, register files, and translation lookaside buffers. Depending on the SRAM application, the design requirements are different. For instance, in space applications, alongside energy efficiency, reliability is a main issue since the system is launched into space with a limited energy budget and stay exposed to high doses of radiation strikes for a long time. The Nwise cell has recently been proposed by the authors of this paper as the first highly reliable radiation hardened SRAM cell designed with 28nm FD-SOI. In this paper, inspired from the Nwise cell, we introduce another highly reliable radiation hardened SRAM cell, the Pwise cell, which is also designed with 28nm FD-SOI technology. Through comprehensive simulations of state-of-the-art cells, we show that both the Nwise and Pwise cells are competitive radiation hardened SRAMs to use in different memory blocks for space applications: (1) Both have the highest level of Single Event Upsets (SEU) tolerance capability for the temperature range deployed in space applications; further, both have the highest level of the tolerance capability to Multi Event Upsets (MEU). ( 2) Compared with the simulated cells that have comparable tolerance capability, the Nwise cell has low read delay and read power consumption, hence, it can be a good choice for space application cache designs, while the Pwise cell can be a proper candidate for space application register file designs since it has low write and read delay.

show abstract

“…Jahinuzzaman et al 11 proposed a radiation-hardened cell, named QUATRO10T, which can recover from an SEU occurring at the "1"-storing node, but it also shows higher probability of write failure. 13,14 This write failure probability of QUATRO10T is mitigated by Dang et al 15 in proposing QUATRO12T. To recover a "1" !…”

mentioning

confidence: 99%

“…Hence, they are more susceptible to SEUs. Other radiation-hardened cells proposed in Prasad et al 13 and Peng et al 17 can overcome SEUs, but at the cost of a higher penalty in silicon area, and all the aforementioned cells, including those from Prasad et al 13 and Peng et al, 17 suffer from read upset, except NS10T. Hence, they exhibit poor read stability.…”

mentioning

confidence: 99%

Radiation‐hardened read‐decoupled low‐power 12T SRAM for space applications

Pal

Divya

et al. 2021

Circuit Theory & Apps

View full text Add to dashboard Cite

In advanced technology, static random-access memory (SRAM) cells used in space are highly sensitive to charge variations caused by high-energy particle strikes, which cause soft-error. Therefore, it is imperative for an SRAM to withstand this harsh environment. However, 6T cells are unable to function reliably in such a place. In order to address this, a radiation-hardened readdecoupled 12T (RHRD12T) SRAM cell is proposed in this paper. The relative strength of RHRD12T is estimated by comparing it with other contemporary cells such as NS10T, PS10T, RHBD10T, QUATRO12T, QUCCE12T, and RHD12T on various major design metrics. Due to the read-decoupled nature of RHRD12T, it shows the highest read stability. It also consumes the lowest hold power compared to all other considered cells, except NS10T. Moreover, RHRD12T exhibits the highest write ability due to the use of two extra access transistors and the poor driving ability of the internal nodes. In terms of write delay, RHRD12T shows an improvement of 1.02Â/1.06Â/1.07Â/1.08Â over NS10T/RHD12T/PS10T/RHBD10T at V DD = 1 V. Moreover, RHRD12T is capable of tolerating the highest amount of critical charge among all other comparison cells and is the least susceptible to single-event upsets. All the aforementioned improvements are obtained at the cost of longer read delay. K E Y W O R D Sdigital circuit, low power design, memory design, read stability, SRAM | INTRODUCTIONSatellites have become an integral part of human society, as we rely on satellite communication for a wide range of services, from meteorology to disaster monitoring, from navigation systems to military operations, and so on. 1 As the technology is advancing, lightweight satellites are replacing heavyweight satellites because of their higher manufacturing cost. 2 Since lightweight satellites have limited resources, they require high-density memory cells, and static random-access memory (SRAM) cells are the best alternative for space applications because of their high packing density and improved logic performance. 1 Space presents extreme conditions, like temperature fluctuations and radiation. Due to the weak geomagnetic field in space, radiation and energized particles increase. To withstand this harsh environment, special electronic components and circuits are used. Once a radiation particle strikes a logic circuit at its sensitive node, it generates electron-hole pairs (Figure 1A). These pairs become separated and accumulate at the sensitive node. 3 The accumulated charge at the sensitive node then generates a transient voltage pulse. If enough charge (i.e., critical charge, Q C ) is

show abstract

Power optimized SRAM cell with high radiation hardened for aerospace applications

Cited by 39 publications

References 33 publications

Soft-Error-Immune Read-Stability-Improved SRAM for Multi-Node Upset Tolerance in Space Applications

Soft-Error-Immune Read-Stability-Improved SRAM for Multi-Node Upset Tolerance in Space Applications

Nwise and Pwise: 10T Radiation Hardened SRAM Cells for Space Applications With High Reliability Requirements

Radiation‐hardened read‐decoupled low‐power 12T SRAM for space applications

Contact Info

Product

Resources

About