This paper proposes a novel L1 data cache design with dualversioning SRAM cells (dvSRAM) for chip multi-processors (CMP) that implement optimistic concurrency proposals. In this new cache architecture, each dvSRAM cell has two cells, a main cell and a secondary cell, which keep two versions of the same data. These values can be accessed, modified, moved back and forth between the main and secondary cells within the access time of the cache. We design and simulate a 32-KB dual-versioning L1 data cache with 45-nm CMOS technology at 2GHz processor frequency and 1V supply voltage, which we describe in detail. We also introduce three well-known use cases that make use of optimistic concurrency execution and that can benefit from our proposed design. Moreover, we evaluate one of the use cases to show the impact of the dual-versioning cell in both performance and energy consumption. Our experiments show that large speedups can be achieved with acceptable overall energy dissipation.
In the electronics space industry, memory cells are one of the main concerns, especially in term of reliability, since radiation particles may hit cell nodes and disturb the state of the cell, possibly causing fatal errors. In this paper we propose the Nwise SRAM cell, an area-efficient and highly reliable radiation hardened memory cell for use in high-density memories for space applications. Simulations confirm that the proposed Nwise cell is fully tolerant to single event upsets (SEU) in any one of its nodes regardless of upset polarity. Meanwhile, compared with the RHBD-10T cell, the latest area-efficient radiation hardened memory cell, it has higher robustness: the minimum critical charge of Nwise is 4.1× 4.1× 4.1× higher than the minimum critical charge of the RHBD-10T cell. It also shows 23% and 12% improvements in read and write static noise margin (SNM). Furthermore, compared with RHBD-10T, up to 18.4% and 7.0% power savings are obtainable during write and read operations respectively. Nwise is about 2.28× × × faster than RHBD-10T during the more frequent read operation, with a similar penalty in write time. Finally, Nwise is the first proposed high density and reliable radiation hardened memory cell that has been designed using the 28nm FD-SOI technology node.
Abstract-Transactional Memory (TM) potentially simplifies parallel programming by providing atomicity and isolation for executed transactions. One of the key mechanisms to provide such properties is version management, which defines where and how transactional updates (new values) are stored. Version management can be implemented either eagerly or lazily. In Hardware Transactional Memory (HTM) implementations, eager version management puts new values in-place and old values are kept in a software log, while lazy version management stores new values in hardware buffers keeping old values in-place. Current HTM implementations, for both eager and lazy version management schemes, suffer from performance penalties due to the inability to handle two versions of the same logical data efficiently.In this paper, we introduce a reconfigurable L1 data cache architecture that has two execution modes: a 64KB general purpose mode and a 32KB TM mode which is able to manage two versions of the same logical data. The latter allows to handle old and new transactional values within the cache simultaneously when executing transactional workloads. We explain in detail the architectural design and internals of this Reconfigurable Data Cache (RDC), as well as the supported operations that allow to efficiently solve existing version management problems. We describe how the RDC can support both eager and lazy HTM systems, and we present two RDC-HTM designs. Our evaluation shows that the Eager-RDC-HTM and Lazy-RDC-HTM systems achieve 1.36× and 1.18× speedup, respectively, over state-of-theart proposals. We also evaluate the area and energy effects of our proposal, and we find that RDC designs are 1.92× and 1.38× more energy-delay efficient compared to baseline HTM systems, with less than 0.3% area impact on modern processors.
This paper proposes a novel adaptable and reliable L1 data cache design (Adapcache) with the unique capability of automatically adapting itself for different supply voltage levels and providing the highest capacity. Depending on the supply voltage level, Adapcache defines three operating modes: In high supply voltages, Adapcache provides reliability through single-bit parity. In middle range of supply voltages, Adapcache writes data to two separate cache-lines simultaneously in order to use one line for error recovery when the other line is faulty. In near threshold supply voltages, Adapcache writes data to three separate cachelines simultaneously in order to provide the correct data based on bitwise majority voter.
Abstract-In this paper we propose a novel Content Addressable Memory (CAM) cell, NEMsCAM, based on both Nanoelectro-mechanical (NEM) switches and CMOS technologies. The memory component of the proposed CAM cell is designed with two complementary non-volatile NEM switches and located on top of the CMOS-based comparison component. As a use case for the NEMsCAM cell, we design first-level data and instruction Translation Lookaside Buffers (TLBs) with 16nm CMOS technology at 2GHz. The simulations show that the NEMsCAM TLB reduces the energy consumption per search operation (by 27%), write operation (by 41.9%) and standby mode (by 53.9%), and the area (by 40.5%) compared to a CMOSonly TLB with minimal performance overhead.
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