Physical characterization of post-deposition annealed metal-organic decomposed cerium oxide film spin-coated on 4H-silicon carbide

Effects of post-deposition annealing temperature and time on physical properties of metal-organic decomposed lanthanum cerium oxide thin film

“…As the annealing temperature increases from 600 to 1000 °C, there is an increment in D from 84.10 nm to 94.65 nm. This increasing trend is in agreement with the growth mechanism of thin film, whereby grain size in a film increases when an annealing temperature is increased, owing to the coalescence of small crystallites to form a larger grain [41][42][43]. Beside the D value, microstrains of the La x Ce y O z films were determined using the W-H approach and they are in a decreasing trend with the increasing annealing temperatures, as shown 7 in Fig.…”

“…2. The lowest microstrains obtained at 1000 °C indicates that the presence of oxygen vacancies in this sample is the least [41].…”

“…Williamson-Hall (W-H) plot was used to determine the grain size (D) of the La x Ce y O z films from the XRD line broadening, in which the details were discussed in Ref. [41]. The obtained D for the films is shown in Fig.…”

Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

“…XRD pattern of Y2O3 films annealed in different ambient, such as oxygen (O2), argon (Ar) [34], nitrous oxide (N2O), forming gas (FG), and nitrogen (N2). the film when the value of T hkl is greater than 1 [54]. Fig.…”

“…Of these diffraction peaks, not much changes was observed in the intensities of the peaks related to Y 2 O 3 (2 2 2), (4 0 0), (4 4 0), and (5 4 1) planes, except for (5 4 3) plane. All of the samples demonstrated a preferred orientation in (5 4 3) plane, as conveniently described by coefficient of texture, T hkl [52][53][54], in Eq. (1):…”