Effects of post-deposition annealing temperature and time on physical properties of metal-organic decomposed lanthanum cerium oxide thin film

Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si

“…The average Q eff value obtained for sample annealed at 400°C was comparable with the amorphous pulsed laser deposited SmScO 3 film deposited on Si (5.00 × 10 11 cm −2 ) [39]. This supported the finding from XRD, which showed the amorphous nature of the 400°C-annealed sample [38]. In addition, the increasing trend in average Q eff value at lower temperatures (400-800°C) implied an increment in positive charges, which subsequently reduced at 1000°C.…”

“…In present work, there is a higher possibility that the positive charges built up in the samples are attributed to both the presence of donor traps at the interface or/and within the oxides as well as the remaining compensated positive charges. The donor traps might be contributed by the oxygen vacancies, which were created upon the formation of lanthanum cerium oxide [38], while the compensated charges were formed after taking into consideration on the trapping of electrons that were injected into the oxide. An incremental trend from 9.68 × 10 11 cm −2 to 2.13 × 10 12 cm −2 in the average value of Q eff was observed in the inset of Fig.…”

“…Up to date, those reported lanthanum-based ternary oxides include LaAlO 3 [23][24][25], La 2 Zr 2 O 7 [26][27][28], La 2 Hf 2 O 7 [29,30], LaScO 3 [31,32], and LaLuO 3 [31,33]. Lanthanum cerium oxide (La x Ce y O z ), which is mainly used as a thermal barrier coating material [34][35][36][37] due to its fascinating properties, such as high coefficient of thermal expansion and low thermal conductivity, has been recently [38] utilized as a gate oxide in Si MOS-based devices. Physical characteristics of the La x Ce y O z have been investigated and results indicated that formation of interfacial layers in between the La x Ce y O z layer and the underlying Si are strongly depending on the annealing temperature and time [38].…”

“…Lanthanum cerium oxide (La x Ce y O z ), which is mainly used as a thermal barrier coating material [34][35][36][37] due to its fascinating properties, such as high coefficient of thermal expansion and low thermal conductivity, has been recently [38] utilized as a gate oxide in Si MOS-based devices. Physical characteristics of the La x Ce y O z have been investigated and results indicated that formation of interfacial layers in between the La x Ce y O z layer and the underlying Si are strongly depending on the annealing temperature and time [38]. A mechanism that contributed to the formation of interfacial layers has been proposed [38].…”

“…Physical characteristics of the La x Ce y O z have been investigated and results indicated that formation of interfacial layers in between the La x Ce y O z layer and the underlying Si are strongly depending on the annealing temperature and time [38]. A mechanism that contributed to the formation of interfacial layers has been proposed [38]. Nevertheless, further investigation on the electrical properties of La x Ce y O z film has not been carried out.…”