Nitrogen-infused wet oxidation process was carried out for 30 min at dissimilar temperatures (400 C, 600 C, 800 C, and 1000 C) onto Ga x Ce y O z films deposited on Si substrate. Polycrystalline Ga x Ce y O z films were obtained with an
A comparison between metal-organic decomposed Ga x Ce y O z and CeO 2 passivation layers subjected to post-deposition annealing at 800 C in oxygen ambient was presented. Mitigation in the formation of positively charged oxygen vacancies in Ga x Ce y O z layer was disclosed by the grazing incidence X-ray diffraction characterization as well as the acquisition of a lower value of positive effective oxide charge (Q eff ) than CeO 2 layer. In addition, Ga x Ce y O z layer was able to sustain a higher electric breakdown field and a lower leakage current density due to the attainment of a lower interface trap density extracted using Terman's and high-low methods, slow trap density, and Q eff when compared with CeO 2 layer.
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