Growth of metal‐organic decomposed ternary
 <scp>
 Ga
 x
 Ce
 y
 O
 z
 </scp>
 films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor

Tan, Kar Yeow; Quah, Hock Jin

doi:10.1002/er.7520

Cited by 2 publications

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“…The lattice parameter a of the investigated Ga x Ce y O z PL was determined based on the equation given below [69]:…”

Section: Resultsmentioning

confidence: 99%

Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor

Shekkeer,

Cheong,

Quah

2024

International Journal of Energy Research

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In this work, different annealing ambient (nitrogen-oxygen-nitrogen (N2-O2-N2), forming gas-oxygen-forming gas (FG-O2-FG), and argon-oxygen-argon (Ar-O2-Ar)) were explored to investigate the feasibility of employing the annealed ternary GaxCeyOz passivation layer (PL) for development of Si-based metal-oxide-semiconductor (MOS) capacitors. The impact of nitrogen and/or hydrogen in hindering the growth of silicon dioxide (SiO2) interfacial layer (IL) was quantitatively evaluated. The combination of effects brought by nitrogen attached to oxygen vacancies, nitrogen-silicon bonding, and nitrogen accumulation at the GaxCeyOz/Si interface effectively minimized the formation of SiO2 IL. Consequently, among all the samples, the GaxCeyOz PL annealed in N2-O2-N2 ambient exhibited superior MOS characteristics in terms of low effective oxide charge, slow trap density, interface trap density, and interface state density, which have translated into good leakage current density-electric field characteristics.

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“…The lattice parameter a of the investigated Ga x Ce y O z PL was determined based on the equation given below [69]:…”

Section: Resultsmentioning

confidence: 99%

Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor

Shekkeer,

Cheong,

Quah

2024

International Journal of Energy Research

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Alteration in growth temperatures of metal-organic decomposed GaxCe1-xOyNz passivation layer in nitrogen/oxygen/nitrogen ambient

Shekkeer

Deng

Cheong

et al. 2023

Ceramics International

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Growth of metal‐organic decomposed ternary Ga _x Ce _y O _z films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor

Abstract: Nitrogen-infused wet oxidation process was carried out for 30 min at dissimilar temperatures (400 C, 600 C, 800 C, and 1000 C) onto Ga x Ce y O z films deposited on Si substrate. Polycrystalline Ga x Ce y O z films were obtained with an

Cited by 2 publications

References 49 publications

Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor

Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor

Alteration in growth temperatures of metal-organic decomposed GaxCe1-xOyNz passivation layer in nitrogen/oxygen/nitrogen ambient

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Growth of metal‐organic decomposed ternary Ga x Ce y O z films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor

Abstract: Nitrogen-infused wet oxidation process was carried out for 30 min at dissimilar temperatures (400 C, 600 C, 800 C, and 1000 C) onto Ga x Ce y O z films deposited on Si substrate. Polycrystalline Ga x Ce y O z films were obtained with an

Cited by 2 publications

References 49 publications

Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor

Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor

Alteration in growth temperatures of metal-organic decomposed GaxCe1-xOyNz passivation layer in nitrogen/oxygen/nitrogen ambient

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Growth of metal‐organic decomposed ternary Ga _x Ce _y O _z films by nitrogen‐infused wet oxidation for metal‐oxide‐semiconductor capacitor