Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si

Abstract

Metal-organic decomposed lanthanum cerium oxide (La x Ce y O z ) film had been spin-coated on n-type Si substrate. Effects of post-deposition annealing temperature and time on the metal-oxide-semiconductor (MOS) properties of the film were studied. As temperature increased from 400 to 1000°C for 15 minutes dwell time, La x Ce y O z demonstrated a decrease in interface trap density (D it ) and total interface trap density (D total ), which were related to the formation of SiO x /silicates interfacial layer (IL). The lowest leakage current density and highest dielectric breakdown voltage (V B ) was obtained in 1000°C-annealed sample. When longer annealing times (30-120 minutes) were studied on the 1000°C-annealed sample, the sample annealed at 1000°C for 120 min showed the best MOS characteristics with V B of 30 V. Reasons contributing to such observation were discussed.

Effect of postdeposition annealing on electrical properties of RF‐magnetron sputtered CeOx gate on 4H‐silicon carbide

“…As the Φ B value is higher, it is more difficult for electrons to overcome the barrier and therefore, a lower J and a higher electric breakdown field can be observed. The Φ B value achieved in this work is higher than the value obtained from O 2 ‐annealed CeO 2 deposited on 4H‐SiC via the MOD method (0.882 eV) 35. Annealing at higher temperature (>1000 °C) is not performed in this work because it may cause surface reconstructions and morphologies on SiC surfaces 36.…”

Effects of annealing time on the electrical properties of the Y2O3gate on silicon

“…This denotes the presence of positive effective oxide charges (Q eff ) in the oxide for the respective samples. Q eff includes the oxide fixed charge, oxide trapped charge, and any mobile ionic charge [22]. A reduction in the displacement of DV FB with the increase in annealing time may signify the reduction of the trap density in the oxide.…”

Ultralow Voltage Operation of ${\rm Al}/{\rm La}_{x}{\rm Ce}_{1-x}{\rm O}_{z}/{\rm 4H\hbox{-}SiC}$ for Oxygen Sensing

“…La x Ce 1−x O z precursor was prepared using metal-organic decomposition method [22]. The mixture was subsequently spin coated onto RCA-cleaned n-type, 4.09°off (0001) oriented 4H-SiC substrates at 4000 r/m for 30 s. Then, the samples were annealed at 400°C-1000°C in argon atmosphere for 15 min at 5°C/min, followed by slow cooling.…”