Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering

Comparison of Y2O3:Bi3+ phosphor thin films fabricated by the spin coating and radio frequency magnetron techniques

“…These methods have advantages and disadvantages depending on the applications and expected film qualities. The quality of the thin films may be attributed to two factors, namely the crystallinity of the structure and the stoichiometry of the chemical composition [13]. These two factors depend on the fabrication parameters [13].…”

“…The quality of the thin films may be attributed to two factors, namely the crystallinity of the structure and the stoichiometry of the chemical composition [13]. These two factors depend on the fabrication parameters [13]. Working pressure, substrate temperature, sputtering atmosphere of Ar, sputtering power and the sputtering time are a few examples of the parameters that must be optimized for thin films that are fabricated by the RF magnetron technique [14].…”

Study on reactive sputtering of yttrium oxide: Process and thin film properties

“…Briefly, owing to high chemical and thermal stability (melting point is up to~2349°C) [1,2], and its mechanical properties (high strength and fracture toughness) [3], yttrium oxide films and particles have been used in thermal or reaction barrier coatings [4] and oxide dispersion strengthened steels [5,6]. Particularly, due to the excellent optical and electric properties, including a wide transmittance range, high refractive index (~2), low absorption, large band gap (~5.4 eV), and high permittivity (~14-18) accompanied with a lattice match with Si and GaAs (for the cubic phase) and graphene (for the hexagonal phase), yttrium oxide thin films become one of the most interesting materials widely used in optical waveguides [7][8][9], and as an antireflective layer [10], or as a high efficiency phosphor by doping with other rare-earth elements [11,12], as well as one component of high-quality metal-oxide-semiconductor (MOS) based devices [13][14][15][16][17][18].…”

Controllable phase formation and physical properties of yttrium oxide films governed by substrate heating and bias voltage

“…Up to now, yttrium oxide films have been prepared by various methods, including molecular beam epitaxy (MBE) [16,17], pulsed laser deposition (PLD) [8,18], sputtering [7,19,20], electron beam deposition [21] etc. Most reports synthesized the cubic phase, while just a few papers reported the successful formation of other phases of yttrium oxide films.…”