Photoluminescence study for thermal- and impurity-induced order-disorder transformations in Ga0.5In0.5P epilayers grown by metalorganic chemical vapor deposition

The thermally induced transition from the ordered to the disordered state of Ga0.52In0.48P/(Al0.35Ga0.65)In0.5P layers was investigated by means of rapid thermal annealing and photoluminescence spectroscopy. The annealing temperature and annealing time dependence of the luminescence was studied in the temperature range from 500 up to 1050 °C and for annealing times between 5 and 600 s. Within a very small temperature range of less than 40° we observe an emission energy blue shift of the GaInP luminescence band by about 100 meV. The shift occurs due to a complete disordering of the previously ordered layers without a simultaneous destruction of the heterostructure. The photoluminescence of the quaternary AlGaInP barrier was also observed and shows a simultaneous blue shift of about 90 meV due to an order-disorder transition.

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Rapid thermal annealing induced order-disorder transition in Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P heterostructures

Hamisch

Steffen

Forchel

et al. 1993

Applied Physics Letters

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Energy spectrum and size quantization in partially ordered semiconductor alloys

Tsiper

1994

Phys. Rev. B

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Implantation Induced Order-Disorder Transition in Ga_0.52In_0.48P/(Al_0.35Ga_0.65)_0.5In_0.5P Heterostructures

Hamisch¹,

Steffen²,

Röntgen

et al. 1993

Jpn. J. Appl. Phys.

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The implantation induced transition from the ordered to the disordered state of Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P–layers was investigated by means of Ar+ ion implantation, rapid thermal annealing (RTA) and photoluminescence spectroscopy. The implantation dose and annealing temperature dependence of the luminescence was studied in the dose range from 1×109 cm-2 to 5×1013 cm-2 and in the temperature range from 500°C up to 1025°C. By an Ar+ dose of 2×1012 cm-2 the temperature of the order-disorder transition can be decreased by about 200°C compared to the transition temperature of only annealed samples. For annealing temperatures higher than 700°C a dose variation by less than one order of magnitude causes an emission energy blue shift of the GaInP luminescence band by about 100 meV due to a complete disordering of the previously ordered layers.

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Photoluminescence study for thermal- and impurity-induced order-disorder transformations in Ga0.5In0.5P epilayers grown by metalorganic chemical vapor deposition

Cited by 3 publications

References 11 publications

Rapid thermal annealing induced order-disorder transition in Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P heterostructures

Rapid thermal annealing induced order-disorder transition in Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P heterostructures

Energy spectrum and size quantization in partially ordered semiconductor alloys

Implantation Induced Order-Disorder Transition in Ga_0.52In_0.48P/(Al_0.35Ga_0.65)_0.5In_0.5P Heterostructures

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Photoluminescence study for thermal- and impurity-induced order-disorder transformations in Ga0.5In0.5P epilayers grown by metalorganic chemical vapor deposition

Cited by 3 publications

References 11 publications

Rapid thermal annealing induced order-disorder transition in Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P heterostructures

Rapid thermal annealing induced order-disorder transition in Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P heterostructures

Energy spectrum and size quantization in partially ordered semiconductor alloys

Implantation Induced Order-Disorder Transition in Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P Heterostructures

Contact Info

Product

Resources

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Implantation Induced Order-Disorder Transition in Ga_0.52In_0.48P/(Al_0.35Ga_0.65)_0.5In_0.5P Heterostructures