Rapid thermal annealing induced order-disorder transition in Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P heterostructures

Hamisch, Y.; Steffen, R.; Forchel, A.; Röntgen, P.

doi:10.1063/1.109172

Cited by 13 publications

(1 citation statement)

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“…32 The cross diffusion of As and P atoms counteracts the effect of Ga and In cross diffusion on the ternary band gap. 34,35 If ordering is present, the observed shift corresponds to a change in InGaP order parameter from ϳ 0.33 to 0.19. Therefore, this Ga incorporation percentage ͑2% for InGaP͒ is a lower bound that assumes no As and P cross diffusion.…”

Section: Discussionmentioning

confidence: 99%

Atomic diffusion and interface electronic structure at In0.49Ga0.51P∕GaAs heterojunctions

Smith¹,

Lueck²,

Ringel³

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have performed cross-sectional cathodoluminescence spectroscopy and secondary ion mass spectrometry measurements of lattice-matched, SiO x -capped In 0.49 Ga 0.51 P / GaAs double heterostructures ͑DHs͒ in order to investigate the relation between chemical interactions and localized electronic states at the epitaxial heterojunction. We measure atomic diffusion of over 100 nm resulting from anneals ranging from 650 to 850°C. A 20 meV increase in the near-band-edge ͑NBE͒ emission energy of InGaP is observed after the highest temperature anneals. This increase is consistent with an increase in the Ga concentration of the ternary layer as a result of diffusion from neighboring GaAs layers. Additionally, we observe InGaP / GaAs interface-localized features at ϳ1.49 and ϳ1.37 eV. The intensity of these emissions relative to the band-edge emission of the underlying layer depends sensitively on the anneal temperature and corresponding diffusion. These results reveal a correlation between cross diffusion and defect emission at InGaP / GaAs interfaces. They clarify the nature of the cross diffusion and reactions that occur at these interfaces in SiO x -capped structures, and those may be expected to occur during interface growth or processing at elevated temperatures. It is demonstrated that these chemical effects can have a significant impact on the electronic structure of lattice-matched III-V heterostructures.

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Section: Discussionmentioning

confidence: 99%