A new Ga0.5In0.5P light-emitting diode (LED) with order/disorder/order (DOD) structure has been fabricated by metalorganic chemical vapor deposition. Growth temperature and dopant concentration were successfully used as growth parameters to obtain a heterojunction-equivalent structure. From the 77 K photoluminescence measurement, three peak energies of the DOD structure can be resolved clearly. It is shown that the DOD structure is equivalent to the double-heterojunction structure. The wavelength of the LED occurring at 667 nm coincides with the ordered active layer emission. The light intensity of the DOD LED is seven times stronger as compared with that of the homojunction disordering LED at the injection current of 10 mA. These results demonstrate that the DOD structure can provide good electrical and optical confinements and can be served as heterojunction-equivalent applications.
Articles you may be interested inEffects of ordering on the operation of AlGaInP lasers grown by metalorganic chemical vapor deposition Ordering effect on the performance of Ga0.5In0.5P visible lightemitting diodes grown by metalorganic chemical vapor deposition Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by metalorganic chemical vapor deposition J. Appl. Phys. 66, 5285 (1989); 10.1063/1.343718 Disordering of the ordered structure in metalorganic chemical vapor deposition grown Ga0.5In0.5P on (001)GaAs substrates by zinc diffusion Appl. Phys. Lett. 52, 2142 (1988); 10.1063/1.99558Al0.5Ga0.5AsGaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition
I n s t i t u t e of E l e c t r i c a l e n g i n e e r i n g , N a t i o n a Z Sun Y a t -S e n U n i v e r s i t y , K a o h s i u n g , Taiwan 8 0 4 , R e p u b Z i c ofChina T e Z : ( 0 7 ) 5 3 1 6 1 7 1 e x t 4 1 2 0 , Fax: ( 0 7 ) 5 6 1 5 1 3 7 H e t e r o j u n c t i o n has w i d e l y been used i n high-speed and p h o t o n i c devices, and l i t e r a l l y l e d t o a r e v o l u t i o n i n device performance. Numerous ways were developed t o o p t i m i z e growth c o n d i t i o n s t o minimize t h e i n t e r f i c i a l d e f e c t d e n s i t i e s a r i s i n g from t h e p h y s i c a l and chemical mismatches. Recent s t u d i e s show t h a t t h e o r d e r e d s t r u c t u r e s found i n e p i l a y e r s of 1 1 1 -V a l l o y s lead t o t h e r e d u c t i o n o f band gap e n e r g y and v i o l a t e t h e one-to-one r e l a t i o n s h i p b e t w e e n t h e band gap and t h e composition. I f t h e conspicuous a d v a n t a g e s of h e t e r o j u n c t i o n can be achieved by u s i n g o n l y one m a t e r i a l w i t h d i f f e r e n t band gaps ( i . e . , o r d e r -d i s o r d e r p a i r s ) , t h e mismatch problems of h e t e r o j u n c t i o n can b e a u t o m a t i c a l l y removed. R e c e n t l y , t h e s p o n t a n e o u s growth-induced o r d e r e d s t r u c t u r e w i t h t h e band-gap e n e r g y d e v i a t e d a b o u t 50-100 m e V (AEg) from t h a t o f d i s o r d e r e d s t r u c t u r e i s t y p i c a l l y observed i n MOCVD grown G a , ~ In,. P e p i t a x i a l l a y e r s . However, t h e A Eg of Gao,51no,5P i s a b o u t 260 m e V by t h e o r e t i c a l e s t i m a t i o n . The d i s c r e p a n c y i s c a u s e d by t h e i m p e r f e c t l y o r d e r e d s t r u c t u r e o f t h e Gao.5Ino.5P f i l m . I f t h e f u l l y ordered s t r u c t u r e i s o b t a i n e d , t h e e l e c t r i c a l confinement of o r d e r -d i s o r d e r p a i r j u n c t i o n s w i t h h i g h AEg So, i t i s g r e a t l y i n t e r e s t i n g t o p u r s u e a l t e r n a t e growth technology t o o b t a i n t h e h i g h -d e g r e e o r d e r i n g and meet t h e r e q u i r e m e n t s of h e t e r o j u n c t i o n . The k i n e t i c s on t h e growing s u r f a c e of GaInP p l a y a n i m p o r t a n t r o l e i n d e t e r m i n i n g t h e d e g r e e o f o r d e r i n g : e s p e c i a l l y , s u r f a c e m o b i l i t y of group 111 atoms i s t h e c r u c i a l parameter. I t w a s reported t h a t t h e m o b i l i t y of t h e group I11 adatoms i s g r e a t l y enhanced u n d e r m e t a l -r i c h c o n d i t i o n s a s compared w i t h t h a t of t h e group V -r i c h c o n d i t i o n s . By t h e growth technology of MOCVD w i t h PH3 m o d u l a t i o n , a G a / I n -r i c h environment i s created d u r i n g t h e i n t e r v a l when t h e PH3 i s closed.I n t h i s r e p o r t , t h e growth o f h i g h -d e g r e e o r d e r e d Gao,sIno,5P by MOCVD w i t h PH3 modulation w a s i n v e s t i g a t e d . I t w a s...
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