Energy spectrum and size quantization in partially ordered semiconductor alloys

Me, Raikh; Tsiper, E. V.

doi:10.1103/physrevb.49.2509

Cited by 14 publications

(5 citation statements)

References 52 publications

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“…In the VB, the effective mass anisotropy is caused mainly by an ordering-induced change in the crystal symmetry, 7 which is much more significant than the nonspherical effect ͑so-called warping͒ in cubic crystals. 11 For the CB, the orderinginduced coupling to the VB, 7,8 together with the folded CB from the L valley, 6,8 causes the effective-mass anisotropy.…”

Section: Introductionmentioning

confidence: 99%

“…On one hand, all three models [6][7][8] predict that the CB effective mass in the ordering direction (m c ʈ ) is larger than the effective mass in the plane perpendicular to the ordering direction (m c Ќ ). On the other hand, these models differ with respect to the dependence of both masses on the ordering parameter.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, these models differ with respect to the dependence of both masses on the ordering parameter. A two-band model, 6 which considers the ⌫ -L coupling, predicts an increase of both mass components as ordering occurs, i.e., m c ʈ Ͼm c Ќ Ͼm c0 (m c0 being the ⌫-point effective mass of the disordered alloy͒. This is the result of the ⌫ -L repulsion and is correlated with the anisotropy in the effective masses at the L point (m L ʈ Ͼm L Ќ Ͼm c0 ).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2 alloys

Ernst

Zhang

Driessen

et al. 1997

Journal of Applied Physics

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Articles you may be interested inOptical method of estimation of degree of atomic ordering within quaternary semiconductor alloys J. Appl. Phys. 112, 023102 (2012); 10.1063/1.4737574 Confinement effects on valence-subband character and polarization anisotropy in (11 2 ¯ 2) semipolar InGaN/GaN quantum wells Small valence-band offset of In 0.17 Al 0.83 N / GaN heterostructure grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 96, 132104 (2010); 10.1063/1.3368689Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2 alloys

Ernst

Zhang

Driessen

et al. 1997

Journal of Applied Physics

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“…Subtracting the averaged potential of the disordered material, one obtains a model for the ordering potential as used in Ref. 14. In principle, there are two different types of matrix elements of the ordering potential, those which couple Γ-and L-point states, and those which lead to interactions within Γ-or L-point states, respectively.…”

Section: A K • P Hamiltonianmentioning

confidence: 99%

Generalization ofk⋅ptheory for periodic perturbations

2000

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We extend standard k · p theory to take into account periodic perturbations which are rapidly oscillating with a wavelength of a few lattice constants. Our general formalism allows us to explicitly consider the Bragg reflections due to the perturbation-induced periodicity. As an example we calculate the effective masses in the lowest two conduction bands of spontaneously ordered GaInP2 as a function of the degree of ordering. Comparison of our results for the lowest conduction band to available experimental data and to first principle calculations shows good agreement. 71.20.Nr,71.15.Th,71.18.+y

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“…A system may however be inhomogeneous with little or no shortrange potential-fluctuations being present. This form of 'technological' inhomogeneity [10,11] may lead to nontrivial transport effects in otherwise 'clean' systems. In principle, the two types of inhomogeneities may be told apart; changing the disorder should show a concomitant change of inhomogeneity if the disorder is inherent.…”

Section: Introductionmentioning

confidence: 99%

Relation between disorder and homogeneity in an amorphous metal

Ovadyahu

2022

Phys. Rev. B

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Disorder and homogeneity are two concepts that refer to spatial variation of the system potential. In condensed-matter systems disorder is typically divided into two types; those with local parameters varying from site to site (diagonal disorder) and those characterized by random transfer-integral values (off-diagonal disorder). Amorphous systems in particular exhibit off-diagonal disorder due to random positions of their constituents. In real systems diagonal and off-diagonal disorder may be interconnected. The formal depiction of disorder as local deviations from a common value focuses attention on the short-range components of the potential-landscape. However, long range potential fluctuation are quite common in real systems. In this work we seek to find a correlation between disorder and homogeneity using amorphous indium-oxide (InxO) films with different carrier-concentrations and with different degree of disorder. Thermal treatment is used as a means of fine tuning the system disorder. In this process the resistance of the sample decreases while its amorphous structure and chemical composition is preserved. The reduced resistivity affects the Ioffe-Regel parameter kFℓ that is taken as a relative measure of disorder in a given sample. The homogeneity of the system was monitored using inelastic light-scattering. This is based on collecting the Raman signal from micron-size spots across the sample. The statistics of these low-energy data are compared with the sample disorder independently estimated from transport measurements. The analysis establishes that heterogeneity and disorder are correlated.

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Energy spectrum and size quantization in partially ordered semiconductor alloys

Cited by 14 publications

References 52 publications

Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2 alloys

Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2 alloys

Generalization ofk⋅ptheory for periodic perturbations

Relation between disorder and homogeneity in an amorphous metal

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