Implantation Induced Order-Disorder Transition in Ga_0.52In_0.48P/(Al_0.35Ga_0.65)_0.5In_0.5P Heterostructures

Abstract

The implantation induced transition from the ordered to the disordered state of Ga0.52In0.48P/(Al0.35Ga0.65)0.5In0.5P–layers was investigated by means of Ar+ ion implantation, rapid thermal annealing (RTA) and photoluminescence spectroscopy. The implantation dose and annealing temperature dependence of the luminescence was studied in the dose range from 1×109 cm-2 to 5×1013 cm-2 and in the temperature range from 500°C up to 1025°C. By an Ar+ dose of 2×1012 cm-2 the temperature of the order-disorder transition can be decreased by about 200°C compared to the transition temperature of only annealed samples. For annealing temperatures higher than 700°C a dose variation by less than one order of magnitude causes an emission energy blue shift of the GaInP luminescence band by about 100 meV due to a complete disordering of the previously ordered layers.

Subcell Debye behavior analysis of order–disorder effects in triple-junction InGaP-based photovoltaic solar cells

“…Problem arising from thermal equilibrium is inherent to the so-called annealing effects on the ordered and disordered subcells, resulting in a shift and broadening of the emission spectra [10,11]. Accordingly, a good-understanding of how ordered and disordered subcells behave in response to changes in temperature is necessary for optimizing device performance at any operating temperature [12][13][14]. Since not only thermal luminescent broadening but also a thermal luminescent shift can be produced by the simultaneous interaction of the incident radiation and the lattice vibration, it is instructive to describe the corresponding energy changes associated with the InGaP alloy configurations in terms of the characteristic Debye temperatures [15].…”