An efficiency droop in GaN-based light-emitting diodes (LED) was characterized by examining its general thermophysical parameters. An effective suppression of emission degradation afforded by the introduction of InGaN/GaN heterobarrier structures in the active region was attributable to an increase in the capture cross-section ratios. The Debye temperatures and the electron–phonon interaction coupling coefficients were obtained from temperature-dependent current-voltage measurements of InGaN/GaN multiple-quantum-well LEDs over a temperature range from 20 to 300 K. It was found that the Debye temperature of the LEDs was modulated by the InN molar fraction in the heterobarriers. As far as the phonons involved in the electron–phonon scattering process are concerned, the average number of phonons decreases with the Debye temperature, and the electron–phonon interaction coupling coefficients phenomenologically reflect the nonradiative transition rates. We can use the characteristic ratio of the Debye temperature to the coupling coefficient (DCR) to assess the efficiency droop phenomenon. Our investigation showed that DCR is correlated to quantum efficiency (QE). The light emission results exhibited the high and low QEs to be represented by the high and low DCRs associated with low and high injection currents, respectively. The DCR can be envisioned as a thermophysical marker of LED performance, not only for efficiency droop characterization but also for heterodevice structure optimization.

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The intensive measures of luminescence in a GaN/InGaN multiple quantum well system are used to examine the thermodynamics and phenomenological structure. The radiative /nonradiative transitions along with absorbed or emitted phonons that occur between the different quantum states of the electrons and holes associated with these processes make the quantum efficiency of a semiconductor nanosystem in an equilibrium state an extensive property. It has long been recognized that tuning of the indium (In) composition in InGaN interlayers gives the potential to obtain a spectrum in the near-infrared to near-ultraviolet spectral range. The thermodynamic intensive properties, including the Debye temperature, carrier temperature, and junction temperature, are the most appropriate metrics to describe the optical-related interactions inherent in a given heterostructure and so can be used as the state variables for understanding the quantum exchange behaviors. The energetic features of the quantum processes are characterized based on analysis of the intensive parameters as determined by means of electroluminescence (EL) and photoluminescence (PL) spectroscopy and current-voltage measurement and then correlated with the designed InGaN/GaN microstructures. According to the McCumber-Sturge theory, the EL and PL Debye temperatures obtained experimentally signal the strength of the electron-phonon and photon-phonon interaction, respectively, while the EL and PL carrier/junction temperatures correspond to the carrier localization. Higher EL Debye temperatures and lower EL carrier/junction temperatures reflect significantly higher luminescence quantum yields, indicative of electron-phonon coupling in the transfer of thermal energy between the confined electrons and the enhancement by excited phonons of heat-assisted emissions. On the other hand, the observation of low luminescence efficiency, corresponding to the lower PL Debye temperatures and higher PL carrier/junction temperatures, is attributed to photon-phonon coupling. These findings are in good accordance to the dependence of the EL and PL quantum efficiency on the In-content of the InGaN/GaN barriers, suggesting that the characteristic Debye and carrier/junction temperatures are intensive parameters useful for assessing the optical properties of a nano-engineered semiconductor heterostructure.