Photoluminescence in degenerate p-type GaAs layers grown by molecular beam epitaxy

Zhang, D.H.; Radhakrishnan, K.; Yoon, S. F.; Han, Ziyao

doi:10.1016/0921-5107(95)01364-4

Cited by 9 publications

(5 citation statements)

References 11 publications

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“…The I β band is centered at ∼1.475 eV and has a width of about 25 meV (fwhm). This agrees reasonably well with literature results on heavily p-doped GaAs for doping levels of ∼5 × 10 19 cm −3 , showing an average band gap shrinkage to ∼1.460 eV at 10 K, 53 a corresponding red shift of the PL peak 55 and a broadening of the emission lines to a width of about 19 meV. 56,57 The spatially homogeneous peak energy and bandwidth in the top region of Figure 2 is thus taken as an indication for a spatially homogeneous doping profile in this nanowire.…”

Section: ■ Results and Discussionsupporting

confidence: 93%

Section: Results and Discussionsupporting

confidence: 93%

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Nanospectroscopic Imaging of Twinning Superlattices in an Individual GaAs-AlGaAs Core–Shell Nanowire

et al. 2014

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GaAs nanowires (NWs) exhibit different, zinc blende (ZB) and wurzite (WZ), crystalline phases and one generally finds an uncontrolled switching between both phases on a scale of 1–10 nm. The change of crystalline structure and stacking fault density strongly affects the local confinement potential of GaAs NWs. Combining low temperature near-field spectroscopic imaging and transmission electron microscopy measurements performed on the very same individual GaAs nanowire allows us to gain an understanding of the local structure–property correlations in such wires. From the photoluminescence measurements at subwavelength spatial resolution local characteristics of the band structure are derived. In particular, our method enables us to assign the observed band gap reduction to the high level of impurity dopants and to distinguish emission from ZB-type regions and from periodically twinned superlattice regions. In this way we demonstrate the ability to trace spatial variations of the crystal structure along the wire axis by all-optical means. Our results provide direct and quantitative insight into the correlations between morphology and optics of GaAs nanowires and hence present an important step toward band gap engineering of nanowires by controlled crystal phase formation.

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Section: ■ Results and Discussionsupporting

confidence: 93%

Section: Results and Discussionsupporting

confidence: 93%

Nanospectroscopic Imaging of Twinning Superlattices in an Individual GaAs-AlGaAs Core–Shell Nanowire

et al. 2014

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“…Instead of shifting to the low energy monotonically, it moves to high energy first with an increase in temperature up to about 50 K, and then drops as the temperature is further raised. This phenomenon has also been observed in Be-doped bulk GaAs [8,9] and in GaAs/GaAsP strained layer quantum well structures [10] as well as in GaAs/InGaAs strained layer system [11,12]. The difference is that in our case, FWHM narrowing was not observed before spreading as temperature was increased.…”

supporting

confidence: 68%

Photoluminescence and dark current of p-doped InGaAs/AlxGa1−xAs strained multiple quantum wells

Zhang

Yoon

Radhakrishnan

et al. 1996

Superlattices and Microstructures

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“…In particular, the incorporation of silicon as an amphoteric dopant in AlGaAs [ 1 , 2 ] and GaAs [ 3 ] grown on high index GaAs substrates have been studied extensively using Hall, photoluminescence and photothermal ionisation measurements. Compared to silicon, beryllium (Be) can be incorporated only as p -type dopant in molecular beam epitaxy (MBE) GaAs [ 4 , 5 ] and liquid phase epitaxy grown AlGaAs [ 6 ]. Photoluminescence studies have been carried out by Galbiati et al [ 7 ] to investigate the effect of Be incorporation and higher hole mobility in MBE grown p -type AlGaAs on (100) and (311)A GaAs orientations.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

et al. 2011

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The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the properties of hole traps in a set of p-type Be-doped Al0.29Ga0.71As samples grown by molecular beam epitaxy on (100) and (311)A GaAs substrates using deep level transient spectroscopy (DLTS) technique. In addition, the effect of the level of Be-doping concentration on the hole deep traps is investigated. It was observed that with increasing the Be-doping concentration from 1 × 1016 to 1 × 1017 cm-3 the number of detected electrically active defects decreases for samples grown on (311)A substrate, whereas, it increases for (100) orientated samples. The DLTS measurements also reveal that the activation energies of traps detected in (311)A are lower than those in (100). From these findings it is expected that mobilities of 2DHGs in Be-doped GaAs-GaAlAs devices grown on (311)A should be higher than those on (100).

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Photoluminescence in degenerate p-type GaAs layers grown by molecular beam epitaxy

Cited by 9 publications

References 11 publications

Nanospectroscopic Imaging of Twinning Superlattices in an Individual GaAs-AlGaAs Core–Shell Nanowire

Nanospectroscopic Imaging of Twinning Superlattices in an Individual GaAs-AlGaAs Core–Shell Nanowire

Photoluminescence and dark current of p-doped InGaAs/AlxGa1−xAs strained multiple quantum wells

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

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