Photoluminescence and dark current of p-doped InGaAs/AlxGa1−xAs strained multiple quantum wells

Zhang, D.H.; Yoon, Soon Fatt; Radhakrishnan, K.; Han, Ziyao

doi:10.1006/spmi.1996.0054

Cited by 2 publications

(1 citation statement)

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“…[1][2][3][4] However, the main drawback of the QWIPs under high temperature ͑T͒ operation is the large dark current. Although many theoretical and experimental studies on the T effect on QWIP performances have been carried out, [5][6][7][8][9][10][11][12][13] the similar research in another promising detector named as superlattice infrared photodetectors ͑SLIPs͒ is deficient. In this paper, we study the T dependence of the photoresponse in SLIPs and design a structure to have better photoresponse enhancement when temperature rises.…”

Section: Introductionmentioning

confidence: 99%

The study of temperature dependence of photoresponse in superlattice infrared photodetectors

Wang

et al. 2007

Journal of Applied Physics

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Temperature dependence of the photoresponse in two superlattice infrared photodetectors with different single barriers is studied. It is found that the short-wavelength response decreases with temperature, but the long-wavelength one increases. The crossing point of those two response ranges is independent of temperature. The movement of its associated wavelength under different biases is investigated and analyzed. The relevant physical mechanisms are found and integrated into a simple model to explain the experimental results. Based on the model, another sample with a superlattice integrated with multiple quantum wells is designed to demonstrate whether its temperature dependence of the photoresponse is consistent with our understanding. The sample indeed shows a broadband response which enhances with temperature in all wavelengths.

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