Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Shim, Jaewoo; Oh, Seyong; Kang, Do Hyung; Jo, Seo-Hyeon; Ali, Muhammad Hasnain; Choi, Woo-Young; Heo, Keun; Jeon, Jae Heung; Lee, Sungjoo; Kim, Minwoo; Song, Young Jae; Park, Jin‐Hong

doi:10.1038/ncomms13413

Cited by 358 publications

(251 citation statements)

References 48 publications

(96 reference statements)

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“…2D semiconductors have been widely studied for various logic functions, which are critical and essential in future fast-speed and low-power electronics applications [36][37][38]. We have further fabricated a ternary inverter based on lateral MoS 2 /BP HJFET, which is connected inseries to a BP FET.…”

Section: Resultsmentioning

confidence: 99%

Multifunctional black phosphorus/MoS₂ van der Waals heterojunction

et al. 2020

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Abstract The fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance. van der Waals heterojunctions built with two-dimensional (2D) semiconductors have been widely studied due to their 2D nature, and their unique electrical and photoelectronic properties are quite attractive in realizing multifunctional devices toward multitask applications. In this work, black phosphorus (BP)/MoS2 heterojunctions have been used to build electronic devices with various functionalities. A p-n diode is achieved based on the vertically stacked BP/MoS2 heterojunction exhibiting an ideal factor of 1.59, whereas a laterally stacked BP/MoS2 heterojunction is implemented to fabricate a photodetector that shows a photodetection responsivity of 2000 mA/W at a wavelength of 1300 nm. Furthermore, a ternary inverter has been realized using a BP field-effect transistor in-series with a lateral BP/MoS2 heterojunction. Such results have unambiguously demonstrated the superiority of BP/MoS2 heterojunction in realizing multiple functionalities and have offered a new pathway for the design and engineering of future circuitry and device integration based on novel 2D semiconductors.

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Section: Resultsmentioning

confidence: 99%

Multifunctional black phosphorus/MoS₂ van der Waals heterojunction

et al. 2020

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“…However, due to the absence of a bandgap, graphene‐based TFETs are unable to obtain a high on/off ratio of the current. TMD‐based TFET devices have also been experimentally demonstrated, including MoS 2 /WSe 2 ,24, 32, 33 MoS 2 /BP,34, 35 SnSe 2 /BP,36 SnSe 2 /WSe 2 ,37 and ReS 2 /BP 35. In these devices, gate‐tunable tunneling current governed by the band‐to‐band tunneling (BTBT) mechanism can be observed through electrostatic gating of energy‐band alignment and carrier density under specific device architectures.…”

Section: Introductionmentioning

confidence: 99%

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

et al. 2018

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Benefiting from the technique of vertically stacking 2D layered materials (2DLMs), an advanced novel device architecture based on a top‐gated MoS2/WSe2 van der Waals (vdWs) heterostructure is designed. By adopting a self‐aligned metal screening layer (Pd) to the WSe2 channel, a fixed p‐doped state of the WSe2 as well as an independent doping control of the MoS2 channel can be achieved, thus guaranteeing an effective energy‐band offset modulation and large through current. In such a device, under specific top‐gate voltages, a sharp PN junction forms at the edge of the Pd layer and can be effectively manipulated. By varying top‐gate voltages, the device can be operated under both quasi‐Esaki diode and unipolar‐Zener diode modes with tunable current modulations. A maximum gate‐coupling efficiency as high as ≈90% and a subthreshold swing smaller than 60 mV dec−1 can be achieved under the band‐to‐band tunneling regime. The superiority of the proposed device architecture is also confirmed by comparison with a traditional heterostructure device. This work demonstrates the feasibility of a new device structure based on vdWs heterostructures and its potential in future low‐power electronic and optoelectronic device applications.

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“…The energy spectrum near those two extrema is parabolic. The presence of two subbands in the conduction band -lower (denoted by subscript 1) and upper (denoted by subscript 2) ones, for which the effective-mass relation m 1 < m 2 for 2D two-dimensional electrons is obeyed [14] -gives us grounds to expect that the effect of negative differential conductance, which is associated with the filling by field-heated electrons of the higher valley characterized by a higher effective mass, can take place in 2D monolayers of the WS 2 or MoS 2 type [15]. Note that this effect has already been observed in "traditional" (not 2D) quantum heterostructures [16].…”

Section: Electronic 2d Devices Based On Hot Electrons (2d Generators mentioning

confidence: 99%

2D semiconductor structures as a basis for new high-tech devices (Review)

Korbutyak¹

2018

Semicond. Phys. Quantum Electron. Optoelectron

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In this article, we present a short overview of the Ukrainian contribution into physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics together with some new results in this field. The possibility of creating "low-threshold" 2D lasers in Si 3 N 4-GaAs and Al x Ga 1-x As-GaAs layered heterostructures, in which two-dimensional electron-hole plasma (EHP) is formed, has been analyzed. The investigations of optical amplification spectra in heterostructures with a two-dimensional quantum well have been performed in details. It has been demonstrated that under the conditions of simultaneous coexistence of 3D-EHP and 2D-EHP, stimulated radiation is formed predominantly in 2D-EHP, with the laser excitation threshold at which optical amplification occurs in 2D-EHP by two orders of magnitude lower than in 3D-EHP, and the corresponding value of the coefficient of optical amplification is 2.5 times greater. A simple theoretical model of electron heating in a system with two valleys is applied to describe 2D semiconductor monolayers of the MoS 2 and WS 2 types. The model is demonstrated to describe sufficiently well the available experimental data on the negative differential conductance effect in a WS 2 monolayer. It confirms the possibility to fabricate Gunn diodes of a new and advanced EMW generation based on the structures concerned. These diodes are capable to generate frequencies of the order of 10 GHz and higher, which makes them attractive for HF practical applications.

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Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Cited by 358 publications

References 48 publications

Multifunctional black phosphorus/MoS₂ van der Waals heterojunction

Multifunctional black phosphorus/MoS₂ van der Waals heterojunction

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

2D semiconductor structures as a basis for new high-tech devices (Review)

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Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Cited by 358 publications

References 48 publications

Multifunctional black phosphorus/MoS2 van der Waals heterojunction

Multifunctional black phosphorus/MoS2 van der Waals heterojunction

Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture

2D semiconductor structures as a basis for new high-tech devices (Review)

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Multifunctional black phosphorus/MoS₂ van der Waals heterojunction

Multifunctional black phosphorus/MoS₂ van der Waals heterojunction